Abstract: An example implant device described herein may be adapted to communicate with other devices via an antenna array. The antenna array may be configured to minimize radiation to surrounding tissue and/or maximize signal power in a direction of device(s) with which the implant device communicates.

Abstract: The specification describes an improved Moving Anti-Reflection Switch (MARS) device structure that largely eliminates charge build up on the movable membrane, and reduces stresses that cause curling of the membrane. The improved device uses a movable membrane made of single crystal silicon.

Abstract: A mirror of known type comprises a stack of pairs of dielectric material layers of alternating high and low refractive indices and a metal layer, preferably gold, capping one end of the stack. For improvising the adherence of the metal layer to the stack, the metal is directly contiguous with a layer of tin oxide. In different mirror structures, the tin oxide can be an extra layer added between the end-most pair of layers and the metal layer; or the tin oxide layer can comprise one layer of only the end-most pair of dielectric layers in the stack; or all of the pairs of dielectric layers in the stack can comprise a layer of tin oxide as one of the pair layers.

Abstract: An electro-optic device for use in wavelength division multiplexed systems. The device comprises a layer structure having two adjustable air gaps. Optical response of the device can be changed by adjusting spacings of the air gaps. The device can be used as an optical power equalizer in wavelength division multiplexed systems.

Abstract: In accordance with the invention, a WDM optical communication system includes a new tunable multi-channel dispersion compensating filter having low loss, low polarization dependence and capable of compensating many channels over a large wavelength range. In essence, the filter comprises an optical cavity with a near 100% reflector on one side and a variable partial reflector on the other side. The device acts as a tunable all-pass filter.

Abstract: In accordance with the invention, a WDM optical communication system includes a new tunable multi-channel dispersion compensating filter having low loss, low polarization dependence and capable of compensating many channels over a large wavelength range. In essence, the filter comprises an optical cavity with a near 100% reflector on one side and a variable partial reflector on the other side. The device acts as a tunable all-pass filter.

Abstract: A method and apparatus for modulating an optical signal using a micromechanical modulator are disclosed. The modulator comprises a membrane, which includes a first and a second layer, a substrate layer, and a substrate, spaced from the membrane to form an air gap. The layers of the membrane are characterized in that there is a relationship between the refractive indices of the layers and the refractive index of the substrate. The membrane is suspended in a first position over the substrate by a flexible support arrangement. Bias is applied to the membrane and the substrate to create an electrostatic force to move the membrane towards the substrate to a second position. The reflectivity of the device to an optical signal changes as the membrane moves from the first position to the second position, thereby modulating the signal.

Abstract: A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

Abstract: The specification describes an improved Moving Anti-Reflection Switch (MARS) device structure that largely eliminates charge build up on the movable membrane, and reduces stresses that cause curling of the membrane. The improved device uses a movable membrane made of single crystal silicon.

Abstract: An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

Abstract: A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

Abstract: The specification describes an optical power level equalizer device for compensating power tilt in a wavelength division multiplexed lightwave system. The device is a movable membrane device, similar in structure to a Mechanical Anti-Reflection Switch (MARS) device, but in which the movable membrane is made essentially transparent to the center wavelength of the multiplexed signal. Reflectivity increases on one side of the power band and decreases on the other, allowing tilt to be compensated without significant power loss in the center wavelengths. The degree of tilt compensation is dependent on the size of the air gap and can be adjusted dynamically to maintain equal power levels in each channel.

Abstract: An optical filter for correcting non-linear gains across a wavelength band includes a first layer having a first layer thickness according to the formula: first layer thickness=m&lgr;/(4nfirst), where m is an odd multiple integer, &lgr; is the central wavelength of the wavelength band, and nfirst is the refractive index of the first layer, and a second layer having a second layer thickness according to the formula: second layer thickness=&lgr;/(4nsecond), where &lgr; is the central wavelength of the wavelength band, and nsecond is the refractive index of the second layer. The optical filter introduces an insertion loss for wavelengths in a wavelength band of optical fiber transmission having an insertion loss curve approximating a quadratic shape in the wavelength band and having a maximum insertion loss at a central wavelength of the wavelength band.

Abstract: A wavelength demultiplexer having at least two pairs of photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path and the pairs of photodetectors are separated by a non-optically active insulator interposed between the pairs. The photodetectors differ in bandgap, and are arranged so that the optical signal passes through relatively larger bandgap photodetectors before being received by relatively smaller bandgap detectors. Each photodetector absorbs photons within a predetermined energy range and generates a voltage as a function of the absorbed energy. The photodetectors can be used to detect, and hence demultiplex, a wavelength-division-multiplexed signal.

Abstract: A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is made by placing a stop-etch layer on top of a buried doped layer and forming at least one delta-doped monolayer in either the stop-etch layer or the buried doped layer. Layers of semiconductor material disposed above the stop-etch layer are removed with an etchant to define an active region of the semiconductor device. The stop-etch layer prevents the etchant from removing the delta-doped monolayer. A non-alloyed metal film is then deposited over the delta-doped monolayer to form an ohmic contact to the buried doped layer.

Abstract: A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

Abstract: An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.

Abstract: A method of aligning, placing, and attaching an optical fiber directly to an electronic, complementary, metal-oxide-semiconductor (CMOS) chip that uses alignment features defined during the CMOS fabrication. The method involves the steps of: i) defining, during the fabrication of an electronic CMOS device, one or more shallow grooves upon the device substrate; ii) disposing an optical fiber within the defined groove(s); and iii) securing the optical fiber within the groove(s). Advantageously, the method may be practiced using a variety of fabrication techniques and apparatus that are compatible with conventional CMOS devices.

Abstract: A method of fabricating oxide-apertured vertical cavity surface emitting lasers involving the steps of: i) defining, during the fabrication of one or more VCSELs on an electronic chip, a number of mesa structures of different sizes; ii) selectively oxidizing the chip and mesa structures to produce an oxide-aperture for each structure; iii) inspecting the chip to determine which one of the mesas is desired or optimal; iv) choosing an appropriate metalization mask that serves to metalize and electrically connect only that desired mesa structure; and v) depositing, a dielectric top mirror on that electrically connected mesa. Advantageously, the method may be practiced using a variety of fabrication techniques and apparatus that are compatible with conventional devices. A distinguishing characteristic of our inventive method, is that only a desired or optimal mesa is completed while the remaining mesas on a particular chip remain unprocessed.

Abstract: An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.