Patents by Inventor Keith Winton Michael
Keith Winton Michael has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6144106Abstract: The instant invention pertains to a multi-layer tamper proof electronic coating wherein the first layer is a protecting layer produced from a preceramic silicon containing material and at least one filler. The second layer is a resin sealer coat produced from a sealer resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides and parylenes. An optional third layer is a cap coating layer selected from SiO.sub.2 coating, SiO.sub.2 /ceramic oxide coating, silicon containing coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen coatings, silicon nitrogen carbon containing coatings and/or diamond like coatings.Type: GrantFiled: September 29, 1997Date of Patent: November 7, 2000Assignee: Dow Corning CorporationInventors: Clayton R. Bearinger, Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5916944Abstract: Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and a filler onto the electronic device, wherein the filler is one which reacts in an oxidizing atmosphere to liberate enough heat to damage the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.Type: GrantFiled: September 29, 1997Date of Patent: June 29, 1999Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5863595Abstract: This invention pertains to a method of forming a coating on an electronic substrate and to the electronic substrates coated thereby. The method comprises applying on the electronic substrate a coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 where R is selected from the group consisting of an alkyl radical having from 1 to 3 carbon atoms, the vinyl radical, the 3,3,3-trifluoropropyl radical, the gamma-glycidoxypropyl radical and the gamma-methacryloxypropyl radical with the provision that at least 70% of the R radicals are methyl, and thereafter ceramifying the coating by heating at a temperature of about 200.degree. C. to 1000.degree. C. The use of the coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 allows for the formation of thick planarizing coatings on the electronic substrate.Type: GrantFiled: January 10, 1997Date of Patent: January 26, 1999Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Diana Kay Deese, Loren Andrew Haluska, Mark Jon Loboda, Keith Winton Michael
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Patent number: 5825078Abstract: This invention relates to integrated circuits which are protected from the environment. Such circuits are hermetically sealed by applying additional ceramic layers to the primary passivation.Type: GrantFiled: September 23, 1992Date of Patent: October 20, 1998Assignee: Dow Corning CorporationInventor: Keith Winton Michael
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Patent number: 5818071Abstract: Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.Type: GrantFiled: February 2, 1995Date of Patent: October 6, 1998Assignee: Dow Corning CorporationInventors: Mark Jon Loboda, Keith Winton Michael
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Patent number: 5807611Abstract: The present invention relates to a ceramic coating composition comprising a preceramic material such as silicon oxide precursors, silicon carbonitride precursors, silicon carbide precursors, and silicon nitride precursors and a flux material such as B.sub.2 O.sub.3, PbO.sub.2, P.sub.2 O.sub.5, and Bi.sub.2 O.sub.3. The present invention also relates to a substrate such as an electronic device having said coating applied and ceramified thereon.Type: GrantFiled: October 4, 1996Date of Patent: September 15, 1998Assignee: Dow Corning CorporationInventors: Clayton R. Bearinger, Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5789325Abstract: A silica-containing coating is formed on an electronic substrate by applying a polycarbosilane on the substrate and converting it to a silica-containing material by heating in an oxidizing environment. The resultant thick planarizing coatings are useful as protective coatings and dielectric inner layers.Type: GrantFiled: April 29, 1996Date of Patent: August 4, 1998Assignee: Dow Corning CorporationInventors: Grish Chandra, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5780163Abstract: A method of forming a protective covering on an electronic or microelectronic device to prevent inspection. A first silica-containing ceramic layer is applied to the surface of the device to planarize its surface. A second silicon carbide coating layer is applied to the surface of the first silica-containing ceramic layer to form a hermetic barrier. A third porous silica-containing ceramic layer is formed on the surface of the second silicon carbide coating layer. The third porous silica-containing ceramic layer is impregnated with an opaque material or filler. A fourth metal layer or metal pattern is applied over the third opaque porous silica-containing ceramic layer. The fourth metal layer or pattern is then coated with a fifth layer similar to the third opaque porous silica-containing ceramic layer.Type: GrantFiled: June 5, 1996Date of Patent: July 14, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5776599Abstract: The present invention relates to a method of forming coatings on electronic substrates and the substrates coated thereby. The method comprises applying a coating comprising hydrogen silsesquioxane resin and a polysilazane on a substrate and heating the coated substrate at a temperature sufficient to convert the resins to ceramics.Type: GrantFiled: December 23, 1996Date of Patent: July 7, 1998Assignee: Dow Corning CorporationInventors: Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5776235Abstract: Thick opaque ceramic coatings are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion, and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing phosphoric anhydride, i.e., phosphorous pentoxide (P.sub.2 O.sub.5), and a pre-ceramic silicon-containing material. It is preferred to also include tungsten carbide (WC) and tungsten metal (W) in the coating mixture. The coating is pyrolyzed to form a ceramic SiO.sub.2 containing coating. A second coating of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC), diamond, or silicon nitride (Si.sub.3 N.sub.4), can be applied over the thick opaque ceramic coating to provide hermeticity. These coatings are useful on patterned wafers, electronic devices, and electronic substrates. The thick opaque ceramic coating is unique because it is resistant to etching using wet chemicals, i.e., acids such as H.sub.3 PO.sub.4 and H.sub.2 SO.sub.4, or bases.Type: GrantFiled: October 4, 1996Date of Patent: July 7, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5753374Abstract: A method for forming a cap on an electronic device to prevent inspection. First, a silica-containing ceramic is applied to the surface the electronic device to planarize the surface. Next, a silicon carbide coating is applied to the surface of the silica containing ceramic to form a hermetic barrier. A layer of porous silica-containing ceramic is then formed on the surface of the silicon carbide coating. Finally, the porous silica-containing ceramic is impregnated with an opaque material.Type: GrantFiled: November 27, 1995Date of Patent: May 19, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5744244Abstract: Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and an inorganic salt onto the electronic device, wherein the inorganic salt is one which reacts with a wet etch to yield an acid or base that damages the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.Type: GrantFiled: June 19, 1997Date of Patent: April 28, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5730792Abstract: Thick opaque ceramic coatings are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion, and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing tungsten carbide (WC), tungsten metal (W), and phosphoric anhydride, i.e., phosphorous pentoxide (P.sub.2 O.sub.5), carried in an aqueous alkanol dispersion of colloidal silica and partial condensate of methylsilanetriol. The coating is pyrolyzed to form a ceramic SiO.sub.2 containing coating. A second coating of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC), diamond, or silicon nitride (Si.sub.3 N.sub.4), can be applied over the thick opaque ceramic coating to provide hermeticity. These coatings are useful on patterned wafers, electronic devices, and electronic substrates. The thick opaque ceramic coating is unique because the methyl silsesquioxane resin is resistant to etching using wet chemicals, i.e., acids such as H.sub.3 PO.sub.4 and H.sub.Type: GrantFiled: October 4, 1996Date of Patent: March 24, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5710203Abstract: Disclosed are compositions which can be used to form tamper-proof coatings on electronic devices. These compositions contain a silica precursor resin and a filler which reacts in an oxidizing atmosphere to liberate heat. Such compositions form coatings which, when oxidized by techniques such as plasma etching, wet etching, or cross-sectioning, liberate heat which causes destruction of the underlying substrate and, thus, inhibits further examination.Type: GrantFiled: November 7, 1994Date of Patent: January 20, 1998Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5707683Abstract: Disclosed are coating compositions which include a preceramic silicon-containing material dissolved in short chain linear siloxanes. The compositions have a long shelf life and are useful for forming coatings which are thick and of good quality.Type: GrantFiled: February 22, 1996Date of Patent: January 13, 1998Assignee: Dow Corning CorporationInventors: Alexander Brian Currie, Cathryn Marie Haines, Michael Dean Little, Keith Winton Michael, Kristen Andrea Scheibert
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Patent number: 5693701Abstract: Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and an inorganic salt onto the electronic device, wherein the inorganic salt is one which reacts with a wet etch to yield an acid or base that damages the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.Type: GrantFiled: October 26, 1995Date of Patent: December 2, 1997Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Loren Andrew Haluska, Keith Winton Michael
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Patent number: 5693565Abstract: A semiconductor integrated circuit (IC) die is made with enhanced resilience to handling, testing, and storage, associated with its qualification and distribution as a KNOWN GOOD DIE (KGD). The IC device has a mechanically tough and chemically inert top layer to protect it from damage. The device contacts are made of thin film metals which facilitate reversible electrical connections used in KGD testing. The overall contact structure protects the device from irreversible damage during the connection, test, and disconnection sequence.Type: GrantFiled: July 15, 1996Date of Patent: December 2, 1997Assignee: Dow Corning CorporationInventors: Robert Charles Camilletti, Mark Jon Loboda, Keith Winton Michael