Abstract: A method of forming a single layer inductive coil structure includes forming a first conductive coil on a substrate, forming an insulating layer by atomic layer deposition (ALD) over the first coil and the substrate, and forming one or more additional conductive coils on each of adjacent sides of the first coil insulated from the first coil and the substrate by the insulating layer. A method of forming a stacked layer inductive coil includes forming a cavity in a substrate, forming a first coil in the cavity wherein the cavity has an atomic layer deposition (ALD) layer, forming a second coil in the cavity adjacent to the first coil and separated by the ALD layer from the first coil, forming an insulating layer over the first and second coil, and forming a third coil on the insulating layer.

Abstract: A method and system plates CoFeX, where X is an insertion metal. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone (HPT). The plating solution being configured to provide a CoFeX film having a high saturation magnetic flux density of greater than 2.3 Tesla and not more than 3 weight percent of X. The method and system also include plating the CoFeX film on a substrate in the plating solution. In some aspects, the plated CoFeX film may be used in structures such as main poles of a magnetic recording head.

Abstract: A method for providing a structure in a magnetic recording transducer is described. The method includes plating a first layer in a plating bath using a first plurality of plating conditions. The first layer has a first galvanic potential. The method also includes modifying the plating bath and/or the first plurality of plating conditions to provide a modified plating bath and/or a second plurality of plating conditions. The method further includes plating a second layer using the modified plating bath and/or the second plurality of plating conditions. The second layer has a second galvanic potential. The first galvanic potential is between the second galvanic potential and a third galvanic potential of a third layer if the third layer adjoins the first layer. The second galvanic potential is between the first galvanic potential and the third galvanic potential of the third layer if the third layer adjoins the second layer.

Abstract: A method provides a structure in a magnetic recording transducer. The structure resides on an underlayer. The method includes providing a protective layer and providing layer(s) for the structure. The protective layer covers a field region but exposes a device region in which the structure is to reside. A first portion of the layer(s) reside in the device region, while a second portion of the layer(s) reside in the field region. The method also includes removing the second portion of the layer(s) using an over-removal condition. The underlayer is covered by a remaining portion of the protective layer after the removing step is completed. The method also includes removing the remaining portion of the protective layer. An underlayer removal rate is substantially less than a protective layer during the step of removing of the protective layer.

Abstract: A method for providing a structure in a magnetic recording transducer is described. The method includes plating a first layer in a plating bath using a first plurality of plating conditions. The first layer has a first galvanic potential. The method also includes modifying the plating bath and/or the first plurality of plating conditions to provide a modified plating bath and/or a second plurality of plating conditions. The method further includes plating a second layer using the modified plating bath and/or the second plurality of plating conditions. The second layer has a second galvanic potential. The first galvanic potential is between the second galvanic potential and a third galvanic potential of a third layer if the third layer adjoins the first layer. The second galvanic potential is between the first galvanic potential and the third galvanic potential of the third layer if the third layer adjoins the second layer.