Abstract: Disclosed is an elastic roller for electrophotography wherein bleeding of an unreacted material, a plasticizer and an additive from the elastic layer to the roller surface is suppressed. Also disclosed is an elastic roller for electrophotography having excellent durability for long use. Specifically disclosed is (1) an elastic roller for electrophotography comprising a metal supporting member, an elastic layer formed on the outer circumferential surface of the metal supporting member, and a coating film which is formed on the elastic layer using a styrene-based thermoplastic elastomer and/or an olefin-based thermoplastic elastomer and composed of at least one or more layers.

Abstract: An electrophotography roller incorporated in an image creating device by the electrophotography comprising a conductive shaft disposed along the center axis, a conductive elastic layer around the shaft, a surface layer on the conductive elastic layer formed concentrically. The JIS A hardness of the conductive elastic layer is 30° or less. The shear modulus of the conductive elastic layer measured in viscoelasticity under the condition of 20° C., 60% PH and 0.1 Hz is 4 105 Pa or more. The width of contact of the roller with another member is sufficiently ensured even under a low pressing pressure. The compression residual strain is small even after the roller is pressed against another member for a long time. If the roller is used as a development roller, a sharp image with less density unevenness due to the residual strain is created.

Abstract: The technique of preparing a semiconductive rubber by adding a conductivity imparting agent to resin matrix is so general but controlling the exhibiting conductive properties to a semiconductive range is difficult and in the technique of imparting conductivity by using an electronic conductive agent such as carbon black, uniform dispersion within the system is difficult and this often causes the problems of the sample fluctuation of the electric properties and voltage dependency of the obtained semiconductive rubber. The semiconductive resin composition of the present invention comprises (A) an oxyalkylene polymer having at least one hydrosilylizable alkenyl group in each molecule, (B) a compound having at least two hydrosilyl groups in each molecule, (C) a hydrosilylizing catalyst, and (D) an ionic conductivity imparting agent or (E) a nonionic surfactant.

Abstract: The touch-panel equipped liquid crystal display apparatus has a polarizing plate, a ¼ wave plate, a touch panel, a ¼ wave plate, and a liquid crystal cell, which are disposed in the above-mentioned order from the display surface side. The arrangement is made such that the polarization axis of the polarizing plate and the slow axis within the film surface of the ¼ wave plate make an angle of 45° substantially, and the slow axis within the film surface of the ¼ wave plate and the polarization axis of the emission light from the liquid crystal cell make an angle of 45° substantially. Further, the slow axes of the ¼ wave plates and are arranged not in parallel with each other, or not cross over at right angles.

Abstract: An electrophotography roller incorporated in an image creating device by the electrophotography comprising a conductive shaft disposed along the center axis, a conductive elastic layer around the shaft, a surface layer on the conductive elastic layer formed concentrically. The JIS A hardness of the conductive elastic layer is 30° or less. The shear modulus of the conductive elastic layer measured in viscoelasticity under the condition of 20° C., 60% PH and 0.1 Hz is 4 105 Pa or more. The width of contact of the roller with another member is sufficiently ensured even under a low pressing pressure. The compression residual strain is small even after the roller is pressed against another member for a long time. If the roller is used as a development roller, a sharp image with less density unevenness due to the residual strain is created.

Abstract: A transparent touch panel comprises a pair of transparent conductive substrates and a retardation film. A transparent conductive film is formed on at least one surface of each of these substrates and these substrates are arranged such that the transparent conductive films are allowed to face each other. By depressing the substrate, these substrates are brought into mutual contact to perform the position detection. The retardation film is made of an amorphous plastic material, meets the relationship nz>ny and has a retardation (nx−ny)×d falling within a range of between 90 nm and 200 nm, wherein d represents the thickness of the film, nx the maximum refractive index within the plane of the retardation film, ny the refractive index in a direction perpendicular to nx, and nz the refractive index in the thickness direction of the retardation film.

Abstract: A transparent touch panel comprises a pair of transparent conductive substrates and a retardation film. A transparent conductive film is formed on at least one surface of each of these substrates and these substrates are arranged such that the transparent conductive films are allowed to face each other. By depressing the substrate, these substrates are brought into mutual contact to perform the position detection. The retardation film is made of an amorphous plastic material, meets the relationship nz>ny and has a retardation (nx−ny)×d falling within a range of between 90 nm and 200 nm, wherein d represents the thickness of the film, nx the maximum refractive index within the plane of the retardation film, ny the refractive index in a direction perpendicular to nx, and nz the refractive index in the thickness direction of the retardation film.

Abstract: This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.

Abstract: A semiconductor device having a transparent electrode comprising SnO.sub.2, at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.

Abstract: A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.

Abstract: Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250.degree. C. and 600.degree. C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.