Abstract: In a process for depositing a superconducting thin film of bismuth-containing compound oxide on a substrate by physical vapor deposition, the improvement wherein the substrate is heated at a temperature between 670.degree. and 750.degree. C. during the deposition.

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (T1) deposited on a substrate, characterized in that the superconducting thin film is deposited on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing bismuth (Bi) deposited on a substrate, characterized in that the superconducting thin film is deposited on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: In a superconducting thin film composed of compound oxide containing at least one of element selected from a group comprising Y, La, Gd, Ho, Er, Tm, Yb, Dy, Sm, Eu and Lu, Ba and Cu, improvement in that said thin film consists of a single crystal or polycrystal whose c-axis is orientated to a predetermined direction or mono-directionally.

Abstract: A novel process for preparing superconductor of bismuth-containing compound oxide such as Bi--Sr--Ca--Cu system.In the present invention, firstly an intermediate compound oxide containing metal elements of the superconductor except bismuth is prepared and then the intermediate compound oxide is contacted with bismuth oxide vapour at a temperature between 750.degree. and 950.degree. C. so that bismuth oxide is reacted with said intermediate compound oxide.

Abstract: A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a

Abstract: An intraocular lens comprises an artificial crystalline lens and a diamond-like carbon film coated on the surface of the artificial crystalline lens.