Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A resist processing system includes a sensor connected for detecting the surface level of the processing solution contained in an intermediate tank, and a controller connected for controlling the fluid pressure on the basis of the surface level detected by the sensor.

Abstract: An apparatus for forming a coating film, comprises a spin chuck for supporting a substrate with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle for supplying a solvent of a coating solution on the substrate, and a second nozzle for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

Abstract: The present invention has a resist processing apparatus for supplying a processing solution onto an object to be processed to perform a resist process, including a processing solution supply nozzle for supplying the processing solution onto the object to be processed, a processing solution feeding arrangement for feeding the processing solution to the processing solution supply nozzle, a processing solution flow path arranged to extend between the processing solution feeding arrangement and the processing solution supply nozzle, and a processing solution deaeration mechanism arranged at an intermediate portion of the processing solution flow path to deaerate the processing solution.

Abstract: An apparatus for forming a coating film, comprises a spin chuck for supporting a substrate with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle for supplying a solvent of a coating solution on the substrate, and a second nozzle for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

Abstract: A resist processing method for introducing a pressurized gas into a vessel storing a solution, sending the solution from the vessel to a nozzle by way of a supply line by means of the pressurized gas, and supplying the solution from the nozzle to a substrate.

Abstract: This invention provides a substrate processing system including a cassette station on which at least one cassette containing a plurality of objects is placed, a process station including a plurality of process chambers for performing processing for the objects, and an object conveying unit for loading the objects into the process chambers and unloading the objects from the process chambers, a first object transfer unit for transferring the objects between the cassette station and the process station, and an interface section including an object waiting region where the objects wait, and a second object transfer unit for transferring the objects to the process station, wherein the process chambers in the process station are arranged around the object conveying unit, and the object conveying unit has a rotating shaft almost parallel to the vertical direction and can move up and down in the vertical direction along the rotating shaft and rotate about the rotating shaft.

Abstract: An apparatus for forming a coating film, comprises a spin chuck for supporting a substrate with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle for supplying a solvent of a coating solution on the substrate, and a second nozzle for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

Abstract: A liquid coating system according to the present invention comprises, a liquid supply source, a nozzle having an inlet communicating with the liquid supply source and a substantially linear liquid discharge portion, a pressure feed unit for feeding the liquid under pressure from the liquid supply source to the nozzle by means of compressed gas, a spin chuck for fixedly supporting a semiconductor wafer, an up-and-down cylinder for causing the liquid discharge portion of the nozzle to closely face the wafer on the spin chuck, and a rotating mechanism for rotating the spin chuck. The nozzle includes a liquid reservoir, in which the liquid supplied from the liquid supply source is collected, and a large number of small passages communicating with the liquid reservoir.

Abstract: A liquid applying system according to the present invention comprises a liquid supply source and a nozzle communicating with the liquid supply source. The nozzle comprises a liquid storing portion for storing a liquid supplied from the liquid supply source, a number of small passages communicating with the liquid storing portion, each of the small passages having a transverse section which is smaller than that of the liquid storing portion, and a slit-like passage communicating with the small passages, in which liquids from the small passages flow together and from which the liquids are continuously discharged like a curtain toward a semiconductor wafer.