Patents by Inventor Keizo Hirai
Keizo Hirai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7163644Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: GrantFiled: November 18, 2004Date of Patent: January 16, 2007Assignee: Hitachi Chemical Company, Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060197054Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: April 20, 2006Publication date: September 7, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060186372Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: April 20, 2006Publication date: August 24, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050269295Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: July 11, 2005Publication date: December 8, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050118820Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: November 18, 2004Publication date: June 2, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Patent number: 6783434Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: GrantFiled: June 19, 2001Date of Patent: August 31, 2004Assignee: Hitachi Chemical Company, Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20040147206Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: January 20, 2004Publication date: July 29, 2004Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Patent number: 6372859Abstract: A thermoresistance adhesive which does not dissolve in the sealer-composing resins at the sealer molding temperature and is capable of providing a semiconductor chip/lead frame adhesive strength under shear of 1 N/4 mm2 or greater, and including, for example, amide, imide, ester or ether linkage is suited for use in producing thermoresistance adhesive solutions and thermoresistance resin pastes, and the semiconductor chips, lead frames, films, etc., made by using such an adhesive are suited for providing low-cost semiconductor devices.Type: GrantFiled: November 26, 1999Date of Patent: April 16, 2002Assignee: Hitachi Chemical Company, Ltd.Inventors: Touichi Sakata, Hiroshi Nishizawa, Keizo Hirai, Kenji Suzuki
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Patent number: 6042933Abstract: Electroconductive composite metal powders comprising flat non-noble metal powders, each covered with a noble metal in an amount of 2 to 30% by weight in average based on the weight of the non-noble metal powders, on 50% or more in average of the whole surface area of the non-noble metal powders, interposing a layer of a mixture of the non-noble metal and noble metal between each non-noble metal powder and a noble metal covering layer, are suitable for providing an electroconductive paste after mixing with a binder, said paste showing excellent electroconductivity and prevention of migration.Type: GrantFiled: August 13, 1998Date of Patent: March 28, 2000Assignees: Hitachi Chemical Company, Ltd., Technopolis Hakodata Industrial Technology Promotion OrganizationInventors: Keizo Hirai, Hiroshi Wada, Akihiro Sasaki, Hisashi Kaga, Junichi Kikuchi, Shozo Yamana, Hideji Kuwajima
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Patent number: 5840432Abstract: Electroconductive composite metal powders comprising flat non-noble metal powders, each covered with a noble metal in an amount of 2 to 30% by weight in average based on the weight of the non-noble metal powders, on 50% or more in average of the whole surface area of the non-noble metal powders, interposing a layer of a mixture of the non-noble metal and noble metal between each non-noble metal powder and a noble metal covering layer, are suitable for providing an electroconductive paste after mixing with a binder, said paste showing excellent electroconductivity and prevention of migration.Type: GrantFiled: February 8, 1996Date of Patent: November 24, 1998Assignees: Hitachi Chemical Company, Ltd., Technopolis Hakodate Industrial TechnologyInventors: Keizo Hirai, Hiroshi Wada, Akihiro Sasaki, Hisashi Kaga, Junichi Kikuchi, Shozo Yamana, Hideji Kuwajima