Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A light emitting element comprises a first electrode, a second electrode configured to transmitting light, an organic layer arranged between the first and the second electrodes, comprising a light emitting layer, and a capping layer arranged on the second electrode and made of a material with a higher refractive index than the refractive index of the material constituting the second electrode. The material constituting the capping layer comprises at least one selected from the group consisting of triarylamine derivative, carbazole derivative, benzimidazole derivative and triazole derivative.

Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.

Abstract: A light emitting element comprises a first electrode, a second electrode configured to transmitting light, an organic layer arranged between the first and the second electrodes, comprising a light emitting layer, and a capping layer arranged on the second electrode and made of a material with a higher refractive index than the refractive index of the material constituting the second electrode. The material constituting the capping layer comprises at least one selected from the group consisting of triarylamine derivative, carbazole derivative, benzimidazole derivative and triazole derivative.

Abstract: An organic electroluminescence device of the present invention comprises a light emitting layer held between electrodes, the light emitting layer containing at least a host material and a dye or pigment. The light emitting layer further comprises an additive exhibiting an absorption edge of which energy level is higher than that of an absorption edge of the dye or pigment, but the difference of the energy levels being less than 120 kJ/mol, having no lone pair, and including at least two aromatic rings. The additive of the present invention is selected from a group consisting of phenyl-substituted anthracenes, naphthyl-substituted anthracenes, naphthyl-substituted naphthalenes, pyrenes, and a naphthacene derivatives.