Abstract: Provided is a method for communication, which includes steps of: receiving a first information from a first node via a first connection with the first node; and transmitting a first information to at least one other node. A connection initiator of the first connection is the first node. The first information includes an address of the first node within a target network domain, the target network domain is a network domain in which the at least one other node is located, and the at least one other node is a node other than a second node in a network partition to be joined by the first node. The address of the first node within the target network domain is used by the first node to establish a connection with the at least one other node.

Abstract: Disclosed are an interactive aggregate signature method, and a device and a storage medium, which relate to the technical field of data encryption. The method comprises: S101, generating a challenge number according to random numbers of all participating terminals, and respectively sending the random numbers corresponding to the participating terminals, the challenge number and a proposal message to corresponding participating terminals; S102, receiving a message from the participating terminals, and if partial signatures are included in the message, recording the partial signatures; S103, determining whether the number of recorded partial signatures reaches a number required for passing of the proposal message; if so, proceeding to S104, involving generating an aggregate signature by means of the partial signatures; and if not, outputting that the proposal message fails to be passed and an aggregate signature cannot be generated, or repeating steps S101 to S103.

Abstract: A method for data processing, a database system, computer equipment and a storage medium. The method includes: by a first device, obtaining global page identifiers of n target data nodes to which a data modification set needs to be distributed, generating n pieces of mapping information corresponding to the n target data nodes, and sending the same to a management module; by the management module, generating n pieces of data modification information corresponding to the n pieces of mapping information, and sending data modification tasks in the n pieces of data modification information to second devices identified by second device identifiers in the n pieces of data modification information, so as to instruct the second devices to update data nodes.

Abstract: Provided is a method for communication, which includes steps of: receiving a first information from a first node via a first connection with the first node; and transmitting a first information to at least one other node. A connection initiator of the first connection is the first node. The first information includes an address of the first node within a target network domain, the target network domain is a network domain in which the at least one other node is located, and the at least one other node is a node other than a second node in a network partition to be joined by the first node. The address of the first node within the target network domain is used by the first node to establish a connection with the at least one other node.

Abstract: Provided are a consensus method and apparatus for a blockchain, a server and a storage medium. A checkpoint round is designed without waiting for transaction execution results of all nodes in each consensus round so as to reduce the impact of transaction execution on consensus and improve consensus stability. A newly created block comprises an execution result and status of a preorder block of the blockchain. Only the consistency of the newly created block is verified to avoid wasting memory resources and computing resources. The checkpoint round can be customized to improve the scalability of consensus algorithms.

Abstract: The present application provides a pipeline-friendly signature and verification method, a device and a storage medium. The method includes the following steps: generating, by the Witness node, a public-private key pair including a private key and a public key, through a basic signature algorithm, and sending the public key to other Witness nodes; selecting, by the Witness node, a random number, and sending V to a Leader node; receiving C sent by the Leader node; calculating a message digest through the basic signature algorithm and a message hash algorithm, according to the C and the public key, and then calculating ps, and sending the ps to the Leader node.

Abstract: Disclosed are an interactive aggregate signature method, and a device and a storage medium, which relate to the technical field of data encryption. The method comprises: S101, generating a challenge number according to random numbers of all participating terminals, and respectively sending the random numbers corresponding to the participating terminals, the challenge number and a proposal message to corresponding participating terminals; S102, receiving a message from the participating terminals, and if partial signatures are included in the message, recording the partial signatures; S103, determining whether the number of recorded partial signatures reaches a number required for passing of the proposal message; if so, proceeding to S104, involving generating an aggregate signature by means of the partial signatures; and if not, outputting that the proposal message fails to be passed and an aggregate signature cannot be generated, or repeating steps S101 to S103.

Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm?3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm?3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm?3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.

Abstract: A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C.

Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.

Abstract: A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C. -1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C.

Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.