Abstract: A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a base; forming a lower dielectric layer; forming a first lower conductive pillar located in an array area, a second lower conductive pillar located in a peripheral area and a third lower conductive pillar located in a core area; forming an upper dielectric layer that exposes top surfaces of the first lower conductive pillar, the second lower conductive pillar and the third lower conductive pillar; and forming a first upper conductive pillar, a second upper conductive pillar and a third upper conductive pillar that are located within the upper dielectric layer; in which the third upper conductive pillar and the third lower conductive pillar constitute a third conductive pillar, and a top surface area of the third lower conductive pillar is larger than a top surface area of the third upper conductive pillar.

Abstract: A method of manufacturing a semiconductor device comprises: forming a doped region having a first conductive type in a semiconductor substrate, and forming a gate structure on the doped region; implanting doping ions having a second conductive type to a second region of the doped region along a vertical direction, so as to form a source/drain region having the second conductive type; implanting doping ions having the first conductive type to a first region of the doped region along a tilt direction inclining toward the gate structure, and then annealing, so as to form a Halo region extending to the gate structure from the source/drain region, wherein the first region is adjacent to the gate structure and the second region is located on the side of the first region facing away from the gate structure, and the first region and the second region have no overlap region.

Abstract: Disclosed is a semiconductor device. The semiconductor device includes: a substrate, including a first surface and a second surface opposite to each other; a gate, located on the first surface of the substrate; a source region located in the substrate on one side of the gate and a drain region located in the substrate another side of the gate; and an anti-punchthrough structure located in the substrate and including a third surface and a fourth surface opposite to each other. The third surface is adjacent to the first surface and lower than the first surface, and the anti-punchthrough structure is located between the source region and the drain region.

Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: forming a gate insulating material layer on a substrate; forming a gate material layer on the gate insulating material layer; and performing an etching process on the gate material layer and the gate insulating material layer to form a gate layer and a gate insulating layer. The gate insulating layer and the gate layer each include a first end and a second end opposite to each other in a direction parallel to a channel length. The first end of the gate insulating layer is recessed inwards by a preset length relative to the first end of the gate layer, and the second end of the gate insulating layer is recessed inwards by the preset length relative to the second end of the gate layer.

Abstract: Embodiments relate to a semiconductor structure and a fabrication method thereof. The semiconductor structure includes: a semiconductor substrate; a dielectric layer positioned on the semiconductor substrate; and a gate structure, including a bandgap-tunable material layer. The bandgap-tunable material layer is positioned on the dielectric layer, a Fermi level of the bandgap-tunable material layer shifts to a conduction band when electrons inflow, and the Fermi level of the bandgap-tunable material layer shifts to a valence band when the electrons outflow. The semiconductor structure and the fabrication method thereof can effectively reduce fabrication difficulty of the gate structure.

Abstract: A method for manufacturing a semiconductor structure includes the following operations. A base and a dielectric layer arranged on the base are provided. A first conductive pillar, a second conductive pillar and a third conductive pillar arranged in the dielectric layer are formed. A mask layer is formed. A portion of a thickness of the third conductive pillar is etched by using the third mask layer as a mask to form a third lower conductive pillar and a third upper conductive pillar stacked on one another, in which the third upper conductive pillar, the third lower conductive pillar and the dielectric layer are configured to form at least one groove. A cover layer filling the at least one groove is formed, in which the cover layer exposes the top surface of the third upper conductive pillar.

Abstract: A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a base; forming a lower dielectric layer; forming a first lower conductive pillar located in an array area, a second lower conductive pillar located in a peripheral area and a third lower conductive pillar located in a core area; forming an upper dielectric layer that exposes top surfaces of the first lower conductive pillar, the second lower conductive pillar and the third lower conductive pillar; and forming a first upper conductive pillar, a second upper conductive pillar and a third upper conductive pillar that are located within the upper dielectric layer; in which the third upper conductive pillar and the third lower conductive pillar constitute a third conductive pillar, and a top surface area of the third lower conductive pillar is larger than a top surface area of the third upper conductive pillar.

Abstract: A semiconductor device includes: a doped region having a first conductive type in which a source region and/or a drain region having a second conductive type is formed; padding layers having the second conductive type formed on the source region and/or the drain region and in contact with the source region and/or the drain region; an interlayer dielectric layer formed on the doped region and the padding layers; electrodes penetrating through the dielectric layer and extending into the padding layers so as to be electrically connected with the padding layers.

Abstract: A method of manufacturing a semiconductor device comprises: forming a doped region having a first conductive type in a semiconductor substrate, and forming a gate structure on the doped region; implanting doping ions having a second conductive type to a second region of the doped region along a vertical direction, so as to form a source/drain region having the second conductive type; implanting doping ions having the first conductive type to a first region of the doped region along a tilt direction inclining toward the gate structure, and then annealing, so as to form a Halo region extending to the gate structure from the source/drain region, wherein the first region is adjacent to the gate structure and the second region is located on the side of the first region facing away from the gate structure, and the first region and the second region have no overlap region.