Abstract: A semiconductor processing composition for removing residues and/or contaminants from substrate containing Cu, barrier metal and low-k dielectric. The processing composition includes at least one quaternary base, at least one organic amine, at least one surface modifier, at least one antioxidant, at least one complexing agent and balance water. The processing composition provides a sufficient corrosion protection to Cu and metal barrier during process queue time without deteriorating reliability of electronic devices.

Abstract: A thermally conductive interface composition is interposed between a heat generating component and a heat dissipating component. To meet escalated heat dissipation for performance demanding devices, a thermally conductive interface composition comprises (A) A linear alkenyl organopolysiloxane containing a silicon-bonded alkenyl-terminated group or groups, (B) A branched alkenyl organopolysiloxane containing at least two silicon-bonded alkenyl groups, (C) thermally conductive fillers in a ternary particle size mixture, (D) An organohydrogenpolysiloxane containing at least two Si—H terminated groups, (E) An addition reaction catalyst, (F) A hydroxy group-containing siloxane, (G) Alkoxy group-containing siloxanes.

Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

Abstract: A thermally conductive interface material is in need to electronic packaging to meet escalated heat dissipation for performance demanding electronics. To survive thermal mismatch introduced stress at an interface of nominal thickness of 200 um and below between electronic component and heat spreader, a thermally conductive silicone gel comprises (A) a trimethyl-terminated organopolysiloxane containing a silicone-bonded alkenyl group or groups, (B) an alkeny-terminated organopolysiloxane, (C) thermally conductive filler with addition of nano particles, (D) an organohydrogen-polysiloxane, (E) an addition reaction catalyst, (F) a catalytic reaction inhibitor, and (G) an alkoxysilane bonding agent. The interface material provides thermal conductivity with low complex storage modulus.