Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: An illumination device includes a plurality of Light Emitting Diodes (LEDs) in a rectangular light mixing cavity mounted above the LEDs and configured to mix and color convert light emitted from the LEDs. The long sidewall surfaces of the rectangular light mixing cavity are coated with a first type of wavelength converting material while the short sidewall surfaces reflect incident light without color conversion. The output window that is above and separated from the LEDs is coated with a second type of wavelength converting material. The light mixing cavity may include a replaceable, reflective insert that includes a non-metallic, diffuse reflective layer backed by a second reflective layer. Additionally, the LEDs may be mounted on raised pads on a mounting board. The light mixing cavity may include a bottom reflector with holes wherein the raised pads elevate the LEDs above the top surface of the bottom reflector through the holes.

Abstract: An illumination device includes a plurality of Light Emitting Diodes (LEDs) in a rectangular light mixing cavity mounted above the LEDs and configured to mix and color convert light emitted from the LEDs. The long sidewall surfaces of the rectangular light mixing cavity are coated with a first type of wavelength converting material while the short sidewall surfaces reflect incident light without color conversion. The output window that is above and separated from the LEDs is coated with a second type of wavelength converting material. The light mixing cavity may include a replaceable, reflective insert that includes a non-metallic, diffuse reflective layer backed by a second reflective layer. Additionally, the LEDs may be mounted on raised pads on a mounting board. The light mixing cavity may include a bottom reflector with holes wherein the raised pads elevate the LEDs above the top surface of the bottom reflector through the holes.