Abstract: Integrated device having GDT and MOV functionalities. In some embodiments, an electrical device can include a first layer and a second layer joined with an interface, with each having an outer surface and an inner surface, such that the inner surfaces of the first and second layers define a sealed chamber therebetween. The electrical device can further include an outer electrode implemented on the outer surface of each of the first and second layers, and an inner electrode implemented on the inner surface of each of the first and second layers. The first layer can include a metal oxide material such that the first outer electrode, the first layer, and the first inner electrode provide a metal oxide varistor (MOV) functionality, and the first inner electrode, the second inner electrode, and the sealed chamber provide a gas discharge tube (GDT) functionality.

Abstract: Integrated device having GDT and MOV functionalities. In some embodiments, an electrical device can include a first layer and a second layer joined with an interface, with each having an outer surface and an inner surface, such that the inner surfaces of the first and second layers define a sealed chamber therebetween. The electrical device can further include an outer electrode implemented on the outer surface of each of the first and second layers, and an inner electrode implemented on the inner surface of each of the first and second layers. The first layer can include a metal oxide material such that the first outer electrode, the first layer, and the first inner electrode provide a metal oxide varistor (MOV) functionality, and the first inner electrode, the second inner electrode, and the sealed chamber provide a gas discharge tube (GDT) functionality.

Abstract: An overvoltage protection circuit for protecting low voltage, high speed digital communication lines. The circuit is integrated into a semiconductor chip and includes a diode bridge, a transient voltage suppressor (TVS) device and resistors through which a bias voltage can be applied to the TVS device to reduce the capacitance hereof.

Abstract: A bipolar semiconductor overvoltage protection circuit presents less capacitance to a communication line. The overvoltage protection circuit includes an overvoltage protection device that is biased with a voltage to not only reduce the capacitance thereof, but also to reduce the change in capacitance as a function of frequency. Changes in communication line voltages thus change the capacitance of the overvoltage protection device less, resulting in the ability to allow the transmission of high capacity data protocols with reduced error rates.

Abstract: A reservoir system for storing and selectively outputting a large quantity of water for flushing animal wastes from adjacent hoghouses or other pens. An above-ground tank is provided with a plurality of water output orifices which are sealed against leakage by flexible seal plates adapted to be selectively opened and closed by flushing valves. Each of the flushing valves comprises a rigid, tubular valve guide sleeve mounted within the water output orifices. Each sleeve includes a plurality of vent mouths radially spaced apart about its lower base. An elongated, rigid piston fitted within each sleeve is controlled by a rigid rod which extends downwardly from a top-mounted crank assembly. The crank is driven by a motor actuated by a user-programmable timer circuit. When the motor is actuated the crank assembly rotates and raises the pistons, and water flows through the vent orifices, the output orifices, to be channeled onto the subfloor of the hoghouses.