Abstract: A switching power converter is provided with a one-shot bias boosting circuit that responds to a premature trip point to boost the performance of a linear comparator in a pulse width modulator. In a sense-amplifier based implementation of the comparator, a clock-edge generator boosts the performance of the sense amplifier at the premature trip point.

Abstract: A switching power converter is provided with a one-shot bias boosting circuit that responds to a premature trip point to boost the performance of a linear comparator in a pulse width modulator. In a sense-amplifier based implementation of the comparator, a clock-edge generator boosts the performance of the sense amplifier at the premature trip point.

Abstract: A pulse-width-modulated switching power converter is provided in which a comparator has a boosted speed to determine a trip point at which a ramp signal equals an error signal. In a linear comparator embodiment, a one-shot bias boosting circuit triggers an increased bias current to the linear comparator to boost the speed to determine the trip point. In a sense-amplifier-based comparator embodiment, a clock generator enables the sense-amplifier-based comparator prior to the trip point.

Abstract: A pulse-width-modulated switching power converter is provided in which a comparator has a boosted speed to determine a trip point at which a ramp signal equals an error signal. In a linear comparator embodiment, a one-shot bias boosting circuit triggers an increased bias current to the linear comparator to boost the speed to determine the trip point. In a sense-amplifier-based comparator embodiment, a clock generator enables the sense-amplifier-based comparator prior to the trip point.

Abstract: Driver circuits with S-shaped gate drive voltage curves for ramp-up and ramp-down of power field effect transistors are presented. In ramp-up, the S-shaped curve rapidly ramps the gate voltage of the power FET to its threshold. This ramp-up is self-terminating. The gate voltage of the power FET is slewed through saturation with a time constant. After a predetermined time, the gate of the power FET is driven to approach the supply voltage level. In ramp-down, the S-shaped curve rapidly ramps the gate voltage of the power FET down to its threshold voltage. This ramp-down is self-terminating. The gate voltage of the power FET is slewed through saturation. The gate-source voltage of the power FET is rapidly ramped down to zero. Such S-shaped curves for the gate drive signal allow the control of the transition times of the gate drive signal to acceptable levels of voltage/current spikes and electromagnetic interference.