Patents by Inventor Kelson D. Chabak

Kelson D. Chabak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation
    Patent number: 11695040
    Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: July 4, 2023
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Kelson D Chabak, Andrew J Green, Gregg H Jessen
  • Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation
    Patent number: 11398551
    Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: July 26, 2022
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Kelson D Chabak, Andrew J Green, Gregg H Jessen
  • Self-Aligned Gate and Drift Design for High-Critical Field Strength Semiconductor Power Transistors with Ion Implantation
    Publication number: 20210234001
    Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.
    Type: Application
    Filed: March 24, 2021
    Publication date: July 29, 2021
    Inventors: Kelson D. Chabak, Andrew J. Green, Gregg H. Jessen
  • Method for flexible radio-frequency devices
    Patent number: 10957789
    Abstract: Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Alx,Iny)Ga1-x-y N-materials in flexible, strainable and wearable radio frequency devices. These devices include (Alx,Iny)Ga1-x-y N-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: March 23, 2021
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Nicholas R. Glavin, Kelson D. Chabak, Michael R. Snure
  • Self-Aligned Gate and Drift Design for High-Critical Field Strength Semiconductor Power Transistors with Ion Implantation
    Publication number: 20200357887
    Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 12, 2020
    Inventors: Kelson D Chabak, Andrew J Green, Gregg H Jessen
  • Systems, methods and apparatus for radio frequency devices
    Patent number: 10692996
    Abstract: Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Alx,Iny)Ga1-x-y N-materials in flexible, strainable and wearable radio frequency devices. These devices include (Alx,Iny)Ga1-x-y N-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: June 23, 2020
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Nicholas R. Glavin, Kelson D. Chabak, Michael R. Snure