Patents by Inventor Kelvin Chan

Kelvin Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128061
    Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.
    Type: Application
    Filed: August 14, 2023
    Publication date: April 18, 2024
    Inventors: FARZAD HOUSHMAND, KELVIN CHAN, RUIYING HAO, WAYNE FRENCH
  • Patent number: 11960826
    Abstract: A method is disclosed for presenting media content on a first client computer of client computers that are participating in a collaboration session.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: April 16, 2024
    Assignee: Google LLC
    Inventors: Kelvin Chan, Yiyang Joy Ding
  • Patent number: 11959868
    Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: April 16, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Xiaopu Li, Kallol Bera, Yaoling Pan, Kelvin Chan, Amir Bayati, Philip Allan Kraus, Kenric T. Choi, William John Durand
  • Patent number: 11955331
    Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: April 9, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Hanhong Chen, Kelvin Chan, Philip Allan Kraus, Thai Cheng Chua
  • Patent number: 11956978
    Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: April 9, 2024
    Assignee: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
  • Patent number: 11909522
    Abstract: Disclosed are systems, methods, and non-transitory computer-readable storage media for monitoring application health via correctable errors. The method includes identifying, by a network device, a network packet associated with an application and detecting an error associated with the network packet. In response to detecting the error, the network device increments a counter associated with the application, determines an application score based at least in part on the counter, and telemeters the application score to a controller. The controller can generate a graphical interface based at least in part on the application score and a timestamp associated with the application score, wherein the graphical interface depicts a trend in correctable errors experienced by the application over a network.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: February 20, 2024
    Assignee: Cisco Technology, Inc.
    Inventors: Keerthi Manjunathan Swarnamanjunathan, Chih-Tsung Huang, Kelvin Chan, Wei-Jen Huang
  • Publication number: 20240040808
    Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
  • Patent number: 11887856
    Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: January 30, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kelvin Chan, Yihong Chen, Jared Ahmad Lee, Kevin Griffin, Srinivas Gandikota, Joseph Yudovsky, Mandyam Sriram
  • Patent number: 11886120
    Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: January 30, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Thomas Joseph Knisley, Kelvin Chan, Regina Germanie Freed, David Michael Thompson, Susmit Singha Roy, Madhur Sachan
  • Publication number: 20240027916
    Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.
    Type: Application
    Filed: May 16, 2023
    Publication date: January 25, 2024
    Inventors: RUIYING HAO, TODD EGAN, EDWARD BUDIARTO, PAOLA DE CECCO, REGINA FREED, BEKELE WORKU, MADHUR SACHAN, LUISA BOZANO, KELVIN CHAN
  • Publication number: 20240007401
    Abstract: Techniques for identifying network congestion and adapting network performance to relieve the network congestion are described. As described, a network element such as a switch reports network congestion indicators such as link level control frames to a network controller. The network controller uses the network congestion indicators reported from the network elements to identify congestion points, data traffic, and data flows experiencing congestion at a network level. The network controller then determines optimized control parameters for the network in order to reduce or alleviate the congestion at the congestion points.
    Type: Application
    Filed: September 19, 2023
    Publication date: January 4, 2024
    Inventors: Dennis Khoa Dang NGUYEN, Keerthi MANJUNATHAN SWARNAMANJUNATHAN, Laura J. SHARPLESS, Kelvin CHAN, Ganga S. DEVADAS
  • Publication number: 20230411130
    Abstract: Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a plasma source, and a chamber coupled to the plasma source. In an embodiment, a pump is coupled to the chamber. In an embodiment, the semiconductor processing tool further comprises a sampling line. In an embodiment, the sampling line comprises a reaction chamber, and an absorption chamber.
    Type: Application
    Filed: June 15, 2022
    Publication date: December 21, 2023
    Inventors: Abdullah Zafar, Kelvin Chan, Philip Allan Kraus
  • Publication number: 20230411129
    Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber configured to secure a substrate, and a plasma source above the pedestal. In an embodiment, a laser source is coupled to the chamber, and a detector is coupled to the chamber across from the laser source. In an embodiment, the detector is configured to be optically coupled to the laser source.
    Type: Application
    Filed: June 15, 2022
    Publication date: December 21, 2023
    Inventors: Abdullah Zafar, Kelvin Chan, Philip Allan Kraus
  • Patent number: 11843541
    Abstract: Techniques for identifying network congestion and adapting network performance to relieve the network congestion are described. As described, a network element such as a switch reports network congestion indicators such as link level control frames to a network controller. The network controller uses the network congestion indicators reported from the network elements to identify congestion points, data traffic, and data flows experiencing congestion at a network level. The network controller then determines optimized control parameters for the network in order to reduce or alleviate the congestion at the congestion points.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: December 12, 2023
    Assignee: Cisco Technology, Inc.
    Inventors: Dennis Khoa Dang Nguyen, Keerthi Manjunathan Swarnamanjunathan, Laura J. Sharpless, Kelvin Chan, Ganga S. Devadas
  • Publication number: 20230395356
    Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.
    Type: Application
    Filed: June 7, 2022
    Publication date: December 7, 2023
    Inventors: Anantha Subramani, Yang Guo, Seyyed Fazeli, Kelvin Chan, Chandrashekara Baginagere, Brian Alvarez, Philip Kraus
  • Publication number: 20230390811
    Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.
    Type: Application
    Filed: June 6, 2022
    Publication date: December 7, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Khokan Chandra Paul, Truong Van Nguyen, Kelvin Chan, Diwakar Kedlaya, Anantha K. Subramani, Abdul Aziz Khaja, Vijet Patil, Yusheng Fang, Liangfa Hu, Prashant Kumar Kulshreshtha
  • Publication number: 20230386839
    Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.
    Type: Application
    Filed: December 16, 2022
    Publication date: November 30, 2023
    Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Thomas Joseph Knisley, Kelvin Chan, Regina Germanie Freed, David Michael Thompson, Susmit Singha Roy, Madhur Sachan
  • Publication number: 20230369112
    Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 16, 2023
    Applicant: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
  • Patent number: 11817320
    Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: November 14, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Kelvin Chan, Hien Minh Le, Sanjay Kamath, Abhijit Basu Mallick, Srinivas Gandikota, Karthik Janakiraman
  • Patent number: 11776805
    Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: October 3, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Joung Joo Lee, Yi Xu, Yu Lei, Xianmin Tang, Kelvin Chan, Alexander Jansen, Philip A. Kraus