Abstract: A multiple die package is described that has an embedded bridge to connect the dies. One example is a microelectronic package that includes a package substrate, a silicon bridge embedded in the substrate, a first interconnect having a first plurality of contacts at a first location of the silicon bridge, a second interconnect having a second plurality of contacts at a second location of the silicon bridge, a third interconnect having a third plurality of contacts at a third location of the silicon bridge, and an electrically conductive line in the silicon bridge connecting a contact of the first interconnect, a contact of the second interconnect, and a contact of the third interconnect each to each other.

Abstract: A multiple die package is described that has an embedded bridge to connect the dies. One example is a microelectronic package that includes a package substrate, a silicon bridge embedded in the substrate, a first interconnect having a first plurality of contacts at a first location of the silicon bridge, a second interconnect having a second plurality of contacts at a second location of the silicon bridge, a third interconnect having a third plurality of contacts at a third location of the silicon bridge, and an electrically conductive line in the silicon bridge connecting a contact of the first interconnect, a contact of the second interconnect, and a contact of the third interconnect each to each other.

Abstract: A multiple die package is described that has an embedded bridge to connect the dies. One example is a microelectronic package that includes a package substrate, a silicon bridge embedded in the substrate, a first interconnect having a first plurality of contacts at a first location of the silicon bridge, a second interconnect having a second plurality of contacts at a second location of the silicon bridge, a third interconnect having a third plurality of contacts at a third location of the silicon bridge, and an electrically conductive line in the silicon bridge connecting a contact of the first interconnect, a contact of the second interconnect, and a contact of the third interconnect each to each other.

Abstract: Discussed generally herein are methods and devices including or providing a high density interconnect structure. A high density interconnect structure can include a stack of alternating dielectric layers and metallization layers comprising at least three metallization layers including conductive material with low k dielectric material between the conductive material, and at least two dielectric layers including first medium k dielectric material with one or more first vias extending therethrough, the at least two dielectric layers situated between two metallization layers of the at least three metallization layers, a second medium k dielectric material directly on a top surface of the stack, a second via extending through the second medium k dielectric material, the second via electrically connected to conductive material in a metallization layer of the three or more metallization layers, and a pad over the second medium k dielectric material and electrically connected to the second via.