Abstract: An antenna unit to be used by being installed so as to face window glass of a building, the antenna unit including a radiating element, a reflective member configured to reflect electromagnetic waves radiated from the radiating element toward outside of the building, and a support unit configured to removably support the reflective member. An antenna unit attachment method includes installing an antenna unit so as to face window glass for a building, the antenna unit having a radiating element and a support unit, and supporting a reflective member that reflects electromagnetic waves radiated from the radiating element by the support unit on an outdoor side relative to the radiating element.

Abstract: An antenna unit to be used by being installed so as to face window glass of a building, the antenna unit including a radiating element, a reflective member configured to reflect electromagnetic waves radiated from the radiating element toward outside of the building, and a support unit configured to removably support the reflective member. An antenna unit attachment method includes installing an antenna unit so as to face window glass for a building, the antenna unit having a radiating element and a support unit, and supporting a reflective member that reflects electromagnetic waves radiated from the radiating element by the support unit on an outdoor side relative to the radiating element.

Abstract: The present invention provides a compound of formula (I) which improves leptin resistance, a pharmaceutical composition comprising the compound, a method for manufacturing a pharmaceutical for improving leptin resistance comprising using the compound, use of the compound for manufacturing a pharmaceutical for improving leptin resistance, and a method for improving leptin resistance comprising administering the compound or the pharmaceutical composition. The improvement of leptin resistance can lead treatment and/or prevention of a disorder associated with leptin resistance, including, particularly, metabolic disorder, obesity, hyperphagia, steatosis, diabetes, and dyslipidemia.

Abstract: Provided are a surface-treated aluminum material having, on an aluminum material formed of aluminum or an aluminum alloy, a porous anodically oxidized film of a uniformly porous type exhibiting no visually recognizable crystal grain pattern after anodic oxidation treatment, and a novel zinc-doped aluminum alloy suitable for manufacture of the surface-treated aluminum material. The surface-treated aluminum material includes an aluminum alloy base material and an anodically oxidized film formed on a surface thereof, in which the aluminum alloy base material is formed of a zinc-doped aluminum alloy having an alloy composition containing 0.05 mass % to 1 mass % of a Zn component, 0.02 mass % or less of inevitable impurities, and the balance of aluminum.

Abstract: Provided is a method of performing electropolishing treatment on an aluminum material, which is capable of easily producing an aluminum material having an excellent outer appearance with luster and uniformity on an industrial scale. The method of performing electropolishing treatment on an aluminum material includes immersing the aluminum material in an electrolytic treatment solution in an electrolytic treatment tank, and applying an electrolysis voltage through use of the aluminum material as an anode, to thereby perform electropolishing treatment on a surface of the aluminum material, the method including: performing, as pretreatment for the electropolishing treatment, anodic oxidation treatment; performing, during the electropolishing treatment, bubble-diffusion-preventing treatment; and performing, as post-treatment for the electropolishing treatment, film peeling treatment for an electropolishing film.

Abstract: The present invention provides a compound of formula (I) which improves leptin resistance, a pharmaceutical composition comprising the compound, a method for manufacturing a pharmaceutical for improving leptin resistance comprising using the compound, use of the compound for manufacturing a pharmaceutical for improving leptin resistance, and a method for improving leptin resistance comprising administering the compound or the pharmaceutical composition. The improvement of leptin resistance can lead treatment and/or prevention of a disorder associated with leptin resistance, including, particularly, metabolic disorder, obesity, hyperphagia, steatosis, diabetes, and dyslipidemia.

Abstract: Provided is an anodic oxidation treatment method for an aluminum material including aluminum or an aluminum alloy capable of forming a porous anodic oxide film of a porous type at a treatment voltage of 10 V or more while suppressing manifestation of a crystal grain pattern to the extent possible. Specifically, provided is an anodic oxidation treatment method for an aluminum material for subjecting an aluminum material to anodic oxidation treatment in a treatment bath of a polybasic acid aqueous solution under a treatment condition of a target voltage of 10 V or more, to form an anodic oxide film on a surface of the aluminum material, the method including, as pre-treatment of the anodic oxidation treatment, subjecting the aluminum material to anodic oxidation treatment in a treatment bath of a polybasic acid aqueous solution under a treatment condition of a voltage of 6 V or less until an electrical quantity reaches 0.05 C/cm2 or more, to form a pre-film on the surface of the aluminum material.

Abstract: Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.

Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

Abstract: A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided. A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO2, wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.

Abstract: A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

Abstract: Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.

Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

Abstract: A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

Abstract: To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

Abstract: There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

Abstract: A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided. A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO2, wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.

Abstract: To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

Abstract: There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

Abstract: This invention relates to a corrosion-resistant aluminum conductive material comprising an aluminum material consisting of aluminum or an aluminum alloy and a conductive film formed on the surface of said aluminum material wherein defects in the conductive film are substantially sealed off by a hot water treatment or a steam treatment and to a process for producing a corrosion-resistant aluminum conductive material which comprises forming a conductive film on the surface of an aluminum material and subjecting to a hot water treatment or a steam treatment thereby substantially sealing off defects in the conductive film. This invention makes it possible to substantially seal off the defects unavoidably developed on the surface of the conductive film without harming the excellent properties of the aluminum material and provide excellent corrosion resistance even when the thickness of the conductive film is small.