Patents by Inventor Ken Eldredge

Ken Eldredge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System for and method of four-conductor magnetic random access memory cell and decoding scheme
    Patent number: 6842389
    Abstract: A four-conductor MRAM device comprising an array of memory cells, each of the memory cells including a first magnetic layer, a dielectric, and a second magnetic layer; a plurality of local column sense lines wherein one is electrically connected to the first magnetic layer of the array of memory cells; a plurality of local row sense lines wherein one of the local row sense lines is electrically connected to the second magnetic layer of the array of memory cells; a plurality of global column write lines parallel to the plurality of local column sense lines; a plurality of global row write lines parallel to the plurality of local row sense lines; and wherein the plurality of local column sense lines and the plurality of local row sense lines are connected to read data from the array of memory cells and the plurality of global column write lines and the plurality of global row write lines are connected to write data to the array of memory cells.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: January 11, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Frederick A. Perner, James R. Eaton, Jr., Kenneth K. Smith, Ken Eldredge, Lung Tran
  • System for and method of accessing a four-conductor magnetic random access memory
    Patent number: 6839270
    Abstract: A control circuit for writing to and reading from MRAMs comprising a row decoder; a first read/write row driver connected to the row decoder; a plurality of global row write conductors connected to the first read/write row driver; a plurality of row taps connected to each of the global row write conductors; and a second read/write row driver connected to the global row write conductors.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: January 4, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Frederick A. Perner, James R. Eaton, Jr., Kenneth K. Smith, Ken Eldredge, Lung Tran
  • System for and method of accessing a four-conductor magnetic random access memory
    Publication number: 20040141364
    Abstract: A control circuit for writing to and reading from MRAMs comprising a row decoder; a first read/write row driver connected to the row decoder; a plurality of global row write conductors connected to the first read/write row driver; a plurality of row taps connected to each of the global row write conductors; and a second read/write row driver connected to the global row write conductors.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 22, 2004
    Inventors: Frederick A. Perner, James R. Eaton, Kenneth K. Smith, Ken Eldredge, Lung Tran
  • System for and method of four-conductor magnetic random access memory cell and decoding scheme
    Publication number: 20040141365
    Abstract: A four-conductor MRAM device comprising an array of memory cells, each of the memory cells including a first magnetic layer, a dielectric, and a second magnetic layer; a plurality of local column sense lines wherein one is electrically connected to the first magnetic layer of the array of memory cells; a plurality of local row sense lines wherein one of the local row sense lines is electrically connected to the second magnetic layer of the array of memory cells; a plurality of global column write lines parallel to the plurality of local column sense lines; a plurality of global row write lines parallel to the plurality of local row sense lines; and wherein the plurality of local column sense lines and the plurality of local row sense lines are connected to read data from the array of memory cells and the plurality of global column write lines and the plurality of global row write lines are connected to write data to the array of memory cells.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 22, 2004
    Inventors: Frederick A. Perner, James R. Eaton, Kenneth K. Smith, Ken Eldredge, Lung Tran