Patents by Inventor Kenetsu Yokogawa
Kenetsu Yokogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915951Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: GrantFiled: June 26, 2020Date of Patent: February 27, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Tatehito Usui, Naoyuki Kofuji, Yutaka Kouzuma, Tomoyuki Watanabe, Kenetsu Yokogawa, Satoshi Sakai, Masaru Izawa
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Publication number: 20240047222Abstract: Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.Type: ApplicationFiled: April 22, 2021Publication date: February 8, 2024Inventors: Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Kenji Ishikawa, Masaru Hori
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Patent number: 11842885Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: GrantFiled: September 15, 2020Date of Patent: December 12, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Patent number: 11682542Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: GrantFiled: February 3, 2021Date of Patent: June 20, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Patent number: 11424106Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.Type: GrantFiled: May 28, 2018Date of Patent: August 23, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yuki Kondo, Kenetsu Yokogawa, Masahito Mori, Satoshi Une, Kazunori Nakamoto
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Patent number: 11398371Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample.Type: GrantFiled: February 26, 2019Date of Patent: July 26, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Naoyuki Kofuji, Kenetsu Yokogawa, Taku Iwase
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Patent number: 11355322Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.Type: GrantFiled: February 6, 2017Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Taku Iwase, Masahito Mori, Takao Arase, Kenetsu Yokogawa
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Publication number: 20220157576Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripType: ApplicationFiled: July 29, 2019Publication date: May 19, 2022Applicant: HITACHI HIGH-TECH CORPORATIONInventors: Taku Iwase, Masakazu Isozaki, Kenetsu Yokogawa, Masahito Mori, Junichi Sayama
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Patent number: 11094509Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.Type: GrantFiled: February 20, 2017Date of Patent: August 17, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Makoto Satake, Kenetsu Yokogawa, Tadayoshi Kawaguchi, Takamasa Ichino
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Publication number: 20210249233Abstract: A plasma processing apparatus equipped with an electrode disposed inside a sample deck on which a wafer is mounted, the sample deck being disposed in the lower part within a processing chamber inside a vacuum container, the electrode being supplied with high frequency power during processing of the wafer, a ring-like member electrode made of a conductor disposed to surround the upper surface on the outer peripheral side of the sample deck, a first ring-like cover made of a dielectric body disposed to cover the ring-like member, and a second ring-like cover made of a conductor disposed to cover the first ring-like cover, and a controller that adjusts the magnitude of the high frequency power according to a result of detection of voltage of the high frequency power supplied to the ring-like member during processing of the wafer.Type: ApplicationFiled: December 18, 2019Publication date: August 12, 2021Inventors: Hiroyuki Kajifusa, Kenetsu Yokogawa, Takao Arase, Masahito Mori
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Publication number: 20210159055Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: ApplicationFiled: February 3, 2021Publication date: May 27, 2021Inventors: Tooru ARAMAKI, Kenetsu YOKOGAWA, Masaru IZAWA
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Publication number: 20210111002Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.Type: ApplicationFiled: May 28, 2018Publication date: April 15, 2021Inventors: Yuki KONDO, Kenetsu YOKOGAWA, Masahito MORI, Satoshi UNE, Kazunori NAKAMOTO
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Patent number: 10930476Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: GrantFiled: July 7, 2016Date of Patent: February 23, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Publication number: 20200411291Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: ApplicationFiled: September 15, 2020Publication date: December 31, 2020Inventors: Tooru ARAMAKI, Kenetsu YOKOGAWA, Masaru IZAWA
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Patent number: 10825657Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.Type: GrantFiled: March 21, 2017Date of Patent: November 3, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kenetsu Yokogawa, Masakazu Isozaki, Masahito Mori
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Patent number: 10825664Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.Type: GrantFiled: August 23, 2018Date of Patent: November 3, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tomoyuki Watanabe, Yutaka Kouzuma, Takumi Tandou, Kenetsu Yokogawa, Hiroshi Ito
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Patent number: 10811231Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: GrantFiled: December 21, 2018Date of Patent: October 20, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Publication number: 20200328099Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
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Patent number: 10804080Abstract: The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.Type: GrantFiled: August 24, 2018Date of Patent: October 13, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa
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Patent number: 10741368Abstract: A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.Type: GrantFiled: August 23, 2018Date of Patent: August 11, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takumi Tandou, Takamasa Ichino, Kenetsu Yokogawa