Abstract: A robot capable of performing precise work is provided. The robot includes an actuator unit and an end effector provided at a tip of the actuator unit. The end effector includes a first sensor capable of detecting a pressure distribution in a contact region coming into contact with a workpiece, and a second sensor capable of detecting position information of the contact region.

Abstract: A sensor module includes a sensor that includes a first sensor layer of a capacitance type including a plurality of first detection units arranged two-dimensionally and a second sensor layer of a capacitance type including a plurality of second detection units arranged two-dimensionally, the first sensor layer being provided on the second sensor layer, and a control unit that scans the plurality of first detection units and the plurality of second detection units.

Abstract: A hand-held tool, such as a disc grinder, is used to perform work at a high work site, a countermeasure is taken to prevent the hand-held tool from falling by using a suspension tool, such as a tether strap. If a coupling part that couples the suspension tool to the hand-held tool is damaged, this fact is notified to a user. Thereby, an original function of the suspension tool can be reliably performed. If a large impact is applied to a coupling member via a suspension tool, the coupling member is displaced to a second position, due to the deformation of a first position retaining member. A conductive portion disengages from contacts to cause a power circuit to be shut off, thereby prohibiting a main body part from being activated.

Abstract: A coating agent includes a film-forming component including a component A consisting of a urethane (meth)acrylate having an isocyanuric ring skeleton, a component B consisting of a tri(meth)acrylate having an isocyanuric ring skeleton and having no urethane bond, and a component C consisting of colloidal silica having a (meth)acryloyl group and a hydrocarbon group having 3 to 13 carbon atoms; and a component D consisting of a photoradical polymerization initiator. The content of the component D is 0.1 parts by mass or more and 10 parts by mass or less based on 100 parts by mass of a total of the film-forming component.

Abstract: A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.

Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

Abstract: An electric power tool disclosed herein may include a motor; a power transmission mechanism connected to the motor; a housing that houses the motor and the power transmission mechanism; a tip tool holder connected to the power transmission mechanism; a cover covering the tip tool holder partially; a first locking mechanism configured to switch between a first locking state and a first unlocked state; and a second locking mechanism configured to switch between a second locking state and a second unlocked state. In the electric power tool, the cover may become detachable from the housing when the user performs the second unlocking operation on the second locking mechanism and the first unlocking operation on the first locking mechanism.

Abstract: A power tool allows easy handling. The power tool includes a brushless motor including a stator and a rotor rotatable relative to the stator, a motor housing that is cylindrical and accommodates the brushless motor, a gear housing in front of the motor housing, a grip housing behind the motor housing and extending in a front-rear direction, and being cylindrical and having a smaller diameter than the motor housing, a controller housing behind the grip housing and accommodating a controller including a switching element, and a power cord connected to the controller housing.

Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.

Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.

Abstract: A hand-held tool, such as a disc grinder, is used to perform work at a high work site, a countermeasure is taken to prevent the hand-held tool from falling by using a suspension tool, such as a tether strap. If a coupling part that couples the suspension tool to the hand-held tool is damaged, this fact is notified to a user. Thereby, an original function of the suspension tool can be reliably performed. If a large impact is applied to a coupling member via a suspension tool, the coupling member is displaced to a second position, due to the deformation of a first position retaining member. A conductive portion disengages from contacts to cause a power circuit to be shut off, thereby prohibiting a main body part from being activated.

Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.

Abstract: A grinder according to one aspect of the present disclosure includes a motor, a housing for housing the motor, a spindle protruding from the housing and configured to be driven to be rotated by the motor, a wheel cover configured to cover a part of a tip end tool attached to the spindle, a detector configured to detect the wheel cover, and a controller configured to stop or restrict the spindle being driven by the motor in response to non-detection of the wheel cover by the detector.

Abstract: A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.

Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.

Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.

Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.

Abstract: A grinder (100) includes a motor (12), a housing (4, 6, 30), a spindle (24), a first cover (120), and a second cover (170). The spindle protrudes downward from the housing, is driven by the motor, and thereby rotates. The first cover is provided in the circumferential direction of the spindle, is fixed to the housing, and at least partially covers a tool accessory (40), which is mounted on the spindle, from above. The second cover is detachably mounted on the housing (6) independently of the first cover.