Patents by Inventor Ken Goto

Ken Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11069328
    Abstract: An information processing apparatus according to the present technology includes a housing, a display section, a pressure-sensitive sensor, and a control section. The housing has a front surface and a sub-surface including an operation area and is capable of being held by a user. The display section is arranged on the front surface. The pressure-sensitive sensor detects a pressure value with respect to the sub-surface. The control section identifies a status that the operation area is operated by the user and a status that the operation area is held by the user on the basis of the pressure value, and executes predetermined processing on the basis of an operation by the user with respect to the operation area in a case where the status is determined that the operation area is operated.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: July 20, 2021
    Assignee: Sony Corporation
    Inventors: Munetake Ebihara, Kimihiko Kogure, Akira Fujisawa, Ken Kobayashi, Tomoko Katsuhara, Tetsuro Goto, Fumiko Shiga
  • Patent number: 11047067
    Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: June 29, 2021
    Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10985016
    Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: April 20, 2021
    Assignees: Tamura Corporation, National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Ken Goto, Yoshinao Kumagai, Hisashi Murakami
  • Publication number: 20210053175
    Abstract: A hand-held tool, such as a disc grinder, is used to perform work at a high work site, a countermeasure is taken to prevent the hand-held tool from falling by using a suspension tool, such as a tether strap. If a coupling part that couples the suspension tool to the hand-held tool is damaged, this fact is notified to a user. Thereby, an original function of the suspension tool can be reliably performed. If a large impact is applied to a coupling member via a suspension tool, the coupling member is displaced to a second position, due to the deformation of a first position retaining member. A conductive portion disengages from contacts to cause a power circuit to be shut off, thereby prohibiting a main body part from being activated.
    Type: Application
    Filed: March 27, 2019
    Publication date: February 25, 2021
    Applicant: MAKITA CORPORATION
    Inventors: Ryosuke OTANI, Junya ISHIKAWA, Takafumi KOTSUJI, Satoshi NINAGAWA, Ken GOTO, Yu ETO
  • Patent number: 10861945
    Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: December 8, 2020
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10821570
    Abstract: A grinder according to one aspect of the present disclosure includes a motor, a housing for housing the motor, a spindle protruding from the housing and configured to be driven to be rotated by the motor, a wheel cover configured to cover a part of a tip end tool attached to the spindle, a detector configured to detect the wheel cover, and a controller configured to stop or restrict the spindle being driven by the motor in response to non-detection of the wheel cover by the detector.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: November 3, 2020
    Assignee: MAKITA CORPORATION
    Inventors: Akira Tomonaga, Katsuhito Fujinami, Ryo Imuta, Masatoshi Nakahama, Akira Mizutani, Takahiro Kawakami, Hideharu Muto, Junya Ishikawa, Ken Goto
  • Publication number: 20200277727
    Abstract: A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.
    Type: Application
    Filed: May 19, 2020
    Publication date: September 3, 2020
    Applicants: IHI CORPORATION, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY, JAPAN FINE CERAMICS CENTER
    Inventors: Takeshi NAKAMURA, Masahiro Kotani, Ken Goto, Akihiko Ito, Satoshi Kitaoka, Daisaku Yokoe, Tetsushi Matsuda
  • Publication number: 20200243332
    Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.
    Type: Application
    Filed: November 16, 2016
    Publication date: July 30, 2020
    Applicants: TAMURA CORPORATION, National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Ken GOTO, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Patent number: 10676841
    Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.
    Type: Grant
    Filed: May 11, 2015
    Date of Patent: June 9, 2020
    Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Publication number: 20200102667
    Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 2, 2020
    Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Patent number: 10538862
    Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: January 21, 2020
    Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10478943
    Abstract: A grinder (100) includes a motor (12), a housing (4, 6, 30), a spindle (24), a first cover (120), and a second cover (170). The spindle protrudes downward from the housing, is driven by the motor, and thereby rotates. The first cover is provided in the circumferential direction of the spindle, is fixed to the housing, and at least partially covers a tool accessory (40), which is mounted on the spindle, from above. The second cover is detachably mounted on the housing (6) independently of the first cover.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: November 19, 2019
    Assignee: MAKITA CORPORATION
    Inventors: Shin Nakamura, Takafumi Kotsuji, Ken Goto, Akira Mizutani, Junya Ishikawa
  • Patent number: 10199512
    Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: February 5, 2019
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Publication number: 20180281146
    Abstract: A grinder according to one aspect of the present disclosure includes a motor, a housing for housing the motor, a spindle protruding from the housing and configured to be driven to be rotated by the motor, a wheel cover configured to cover a part of a tip end tool attached to the spindle, a detector configured to detect the wheel cover, and a controller configured to stop or restrict the spindle being driven by the motor in response to non-detection of the wheel cover by the detector.
    Type: Application
    Filed: September 23, 2016
    Publication date: October 4, 2018
    Applicant: MAKITA CORPORATION
    Inventors: Akira TOMONAGA, Katsuhito FUJINAMI, Ryo IMUTA, Masatoshi NAKAHAMA, Akira MIZUTANI, Takahiro KAWAKAMI, Hideharu MUTO, Junya ISHIKAWA, Ken GOTO
  • Publication number: 20180254355
    Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
    Type: Application
    Filed: March 9, 2016
    Publication date: September 6, 2018
    Applicants: TAMURA CORPORATION, National Institute of Information and Communications Technology, National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Kohei SASAKI, Ken GOTO, Masataka HIGASHIWAKI, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Publication number: 20180073164
    Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
    Type: Application
    Filed: February 17, 2016
    Publication date: March 15, 2018
    Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY O F AGRICULTURE AND TECHNOLOGY
    Inventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Publication number: 20170278933
    Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.
    Type: Application
    Filed: August 18, 2015
    Publication date: September 28, 2017
    Inventors: Kohei SASAKI, Ken GOTO, Masataka HIGASHIWAKI, Man Hoi WONG, Akinori KOUKITO, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Patent number: 9704532
    Abstract: Generating a movie preview can include generating a preview object from frames associated with a media object and encoding the preview object for display in a display area. Based on a position of a control device within the display area, a frame can be selected from the preview object for display in the display area. Additionally, generating the preview object can include concatenating the frames to form a single image.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: July 11, 2017
    Assignee: APPLE INC.
    Inventors: Andy Hakim, Ken Goto
  • Publication number: 20170145590
    Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.
    Type: Application
    Filed: May 11, 2015
    Publication date: May 25, 2017
    Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Publication number: 20170072534
    Abstract: A grinder (100) includes a motor (12), a housing (4, 6, 30), a spindle (24), a first cover (120), and a second cover (170). The spindle protrudes downward from the housing, is driven by the motor, and thereby rotates. The first cover is provided in the circumferential direction of the spindle, is fixed to the housing, and at least partially covers a tool accessory (40), which is mounted on the spindle, from above. The second cover is detachably mounted on the housing (6) independently of the first cover.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 16, 2017
    Inventors: Shin NAKAMURA, Takafumi KOTSUJI, Ken GOTO, Akira MIZUTANI, Junya ISHIKAWA