Patents by Inventor Ken Goto
Ken Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250030133Abstract: A lead for a nonaqueous electrolyte battery includes a conductor, and a first electrically insulating resin film and a second electrically insulating resin film disposed at the upper surface and the lower surface of the conductor, respectively. With the conductor being viewed in a direction perpendicular to the upper surface, when an axis extending along selected two sides of the conductor is defined as an X-axis, the selected two sides facing each other, and an axis orthogonal to the X-axis is defined as a Y-axis, the first electrically insulating resin film and the second electrically insulating resin film are disposed so as not to cover two end portions of the conductor in a direction along the Y-axis and are disposed so as to extend along the X-axis and cross and cover, at a portion of the conductor other than the two end portions, the conductor.Type: ApplicationFiled: July 6, 2024Publication date: January 23, 2025Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Kengo GOTO, Ken YANAGIDA
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Publication number: 20240352619Abstract: An object is to provide a technique capable of increasing device characteristics. A crystal lamination structure includes a Ga2O3 single-crystal substrate having a first main surface. The crystal lamination structure includes a Ga2O3 single-crystal layer as an epitaxial growth layer provided on the first main surface of the Ga2O3 single-crystal substrate and having a second main surface on a side opposite to the Ga2O3 single-crystal substrate. A plane direction of the first main surface of the Ga2O3 single-crystal substrate is plane. A plane direction of the second main surface of the Ga2O3 single-crystal layer is plane.Type: ApplicationFiled: September 3, 2021Publication date: October 24, 2024Applicant: Mitsubishi Electric CorporationInventors: Yohei YUDA, Tatsuro WATAHIKI, Yoshinao KUMAGAI, Ken GOTO
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Patent number: 11982016Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.Type: GrantFiled: September 10, 2021Date of Patent: May 14, 2024Assignees: Tamura Corporation, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken Goto, Kohei Sasaki, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 11980991Abstract: An electric power tool disclosed herein may include a motor; a power transmission mechanism connected to the motor; a housing that houses the motor and the power transmission mechanism; a tip tool holder connected to the power transmission mechanism; a cover covering the tip tool holder partially; a first locking mechanism configured to switch between a first locking state and a first unlocked state; and a second locking mechanism configured to switch between a second locking state and a second unlocked state. In the electric power tool, the cover may become detachable from the housing when the user performs the second unlocking operation on the second locking mechanism and the first unlocking operation on the first locking mechanism.Type: GrantFiled: August 1, 2019Date of Patent: May 14, 2024Assignee: MAKITA CORPORATIONInventors: Kenichi Tabushi, Akira Mizutani, Ken Goto, Kenji Shibata, Hideharu Muto, Satoshi Ninagawa, Junya Ishikawa, Takafumi Kotsuji
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Patent number: 11964356Abstract: A hand-held tool, such as a disc grinder, is used to perform work at a high work site, a countermeasure is taken to prevent the hand-held tool from falling by using a suspension tool, such as a tether strap. If a coupling part that couples the suspension tool to the hand-held tool is damaged, this fact is notified to a user. Thereby, an original function of the suspension tool can be reliably performed. If a large impact is applied to a coupling member via a suspension tool, the coupling member is displaced to a second position, due to the deformation of a first position retaining member. A conductive portion disengages from contacts to cause a power circuit to be shut off, thereby prohibiting a main body part from being activated.Type: GrantFiled: March 27, 2019Date of Patent: April 23, 2024Assignee: MAKITA CORPORATIONInventors: Ryosuke Otani, Junya Ishikawa, Takafumi Kotsuji, Satoshi Ninagawa, Ken Goto, Yu Eto
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Patent number: 11873604Abstract: A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.Type: GrantFiled: May 19, 2020Date of Patent: January 16, 2024Assignees: IHI CORPORATION, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY, JAPAN FINE CERAMICS CENTERInventors: Takeshi Nakamura, Masahiro Kotani, Ken Goto, Akihiko Ito, Satoshi Kitaoka, Daisaku Yokoe, Tetsushi Matsuda
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Publication number: 20210404086Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.Type: ApplicationFiled: September 10, 2021Publication date: December 30, 2021Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken GOTO, Kohei SASAKI, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20210299813Abstract: An electric power tool disclosed herein may include a motor; a power transmission mechanism connected to the motor; a housing that houses the motor and the power transmission mechanism; a tip tool holder connected to the power transmission mechanism; a cover covering the tip tool holder partially; a first locking mechanism configured to switch between a first locking state and a first unlocked state; and a second locking mechanism configured to switch between a second locking state and a second unlocked state. In the electric power tool, the cover may become detachable from the housing when the user performs the second unlocking operation on the second locking mechanism and the first unlocking operation on the first locking mechanism.Type: ApplicationFiled: August 1, 2019Publication date: September 30, 2021Applicant: MAKITA CORPORATIONInventors: Kenichi TABUSHI, Akira MIZUTANI, Ken GOTO, Kenji SHIBATA, Hideharu MUTO, Satoshi NINAGAWA, Junya ISHIKAWA, Takafumi KOTSUJI
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Publication number: 20210268637Abstract: A power tool allows easy handling. The power tool includes a brushless motor including a stator and a rotor rotatable relative to the stator, a motor housing that is cylindrical and accommodates the brushless motor, a gear housing in front of the motor housing, a grip housing behind the motor housing and extending in a front-rear direction, and being cylindrical and having a smaller diameter than the motor housing, a controller housing behind the grip housing and accommodating a controller including a switching element, and a power cord connected to the controller housing.Type: ApplicationFiled: September 25, 2019Publication date: September 2, 2021Applicant: MAKITA CORPORATIONInventor: Ken GOTO
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Patent number: 11047067Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.Type: GrantFiled: December 3, 2019Date of Patent: June 29, 2021Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10985016Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.Type: GrantFiled: November 16, 2016Date of Patent: April 20, 2021Assignees: Tamura Corporation, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken Goto, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20210053175Abstract: A hand-held tool, such as a disc grinder, is used to perform work at a high work site, a countermeasure is taken to prevent the hand-held tool from falling by using a suspension tool, such as a tether strap. If a coupling part that couples the suspension tool to the hand-held tool is damaged, this fact is notified to a user. Thereby, an original function of the suspension tool can be reliably performed. If a large impact is applied to a coupling member via a suspension tool, the coupling member is displaced to a second position, due to the deformation of a first position retaining member. A conductive portion disengages from contacts to cause a power circuit to be shut off, thereby prohibiting a main body part from being activated.Type: ApplicationFiled: March 27, 2019Publication date: February 25, 2021Applicant: MAKITA CORPORATIONInventors: Ryosuke OTANI, Junya ISHIKAWA, Takafumi KOTSUJI, Satoshi NINAGAWA, Ken GOTO, Yu ETO
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Patent number: 10861945Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.Type: GrantFiled: August 18, 2015Date of Patent: December 8, 2020Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10821570Abstract: A grinder according to one aspect of the present disclosure includes a motor, a housing for housing the motor, a spindle protruding from the housing and configured to be driven to be rotated by the motor, a wheel cover configured to cover a part of a tip end tool attached to the spindle, a detector configured to detect the wheel cover, and a controller configured to stop or restrict the spindle being driven by the motor in response to non-detection of the wheel cover by the detector.Type: GrantFiled: September 23, 2016Date of Patent: November 3, 2020Assignee: MAKITA CORPORATIONInventors: Akira Tomonaga, Katsuhito Fujinami, Ryo Imuta, Masatoshi Nakahama, Akira Mizutani, Takahiro Kawakami, Hideharu Muto, Junya Ishikawa, Ken Goto
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Publication number: 20200277727Abstract: A high-temperature-steam-oxidation-resistive coated reinforcement fiber applicable to a fiber reinforced composite, is provided with: a reinforcement fiber; a coating layer covering the reinforcement fiber and including a rare-earth silicate; an exfoliative layer intervening in an interface between the coating layer and the reinforcement fiber; and a supplemental coating layer covering the reinforcement fiber, the exfoliative layer and the coating layer.Type: ApplicationFiled: May 19, 2020Publication date: September 3, 2020Applicants: IHI CORPORATION, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY, JAPAN FINE CERAMICS CENTERInventors: Takeshi NAKAMURA, Masahiro Kotani, Ken Goto, Akihiko Ito, Satoshi Kitaoka, Daisaku Yokoe, Tetsushi Matsuda
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Publication number: 20200243332Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.Type: ApplicationFiled: November 16, 2016Publication date: July 30, 2020Applicants: TAMURA CORPORATION, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken GOTO, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Patent number: 10676841Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.Type: GrantFiled: May 11, 2015Date of Patent: June 9, 2020Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20200102667Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.Type: ApplicationFiled: December 3, 2019Publication date: April 2, 2020Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Patent number: 10538862Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.Type: GrantFiled: February 17, 2016Date of Patent: January 21, 2020Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: D1000242Type: GrantFiled: May 2, 2022Date of Patent: October 3, 2023Assignee: MAKITA CORPORATIONInventors: Kazunori Hattori, Ken Goto