Abstract: The present invention provides a method for producing DCR that can efficiently sublimate a large amount of crude DCR to stably supply DCR. Also, the present invention relates to a sublimation apparatus applicable to the production method. The method for producing an organoruthenium compound for a chemical vapor deposition raw material containing dodecacarbonyl triruthenium (DCR) includes the step for purifying DCR by separating impurity elements from crude DCR by a sublimation method, and in the purification step, crude DCR is heated and sublimated in an atmosphere having a carbon monoxide concentration of 30 to 100% and then cooled to precipitate DCR. According to the present invention, a large amount of crude DCR can be efficiently sublimated, and thus a large amount of DCR can be supplied stably.

Abstract: The present invention provides a method for producing DCR that can efficiently sublimate a large amount of crude DCR to stably supply DCR. Also, the present invention relates to a sublimation apparatus applicable to the production method. The method for producing an organoruthenium compound for a chemical vapor deposition raw material containing dodecacarbonyl triruthenium (DCR) includes the step for purifying DCR by separating impurity elements from crude DCR by a sublimation method, and in the purification step, crude DCR is heated and sublimated in an atmosphere having a carbon monoxide concentration of 30 to 100% and then cooled to precipitate DCR. According to the present invention, a large amount of crude DCR can be efficiently sublimated, and thus a large amount of DCR can be supplied stably.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The invention provides a method for producing a sputtering target material including electrolyzing a molten salt mixture containing a precious metal salt and a solvent salt, to thereby deposit a precious metal or a precious metal alloy. The method enables simplification of production steps and produces high-purity target materials. In addition, the electrodeposited precious metal or precious metal alloy is heat-treated at a temperature of at least 800° C. but lower than the melting point of the precious metal, to thereby produce a target material of higher purity.

Abstract: A shield cover is formed from a single developed metal sheet by folding the metal sheet so as to define a top wall, a bottom wall, upper left hand and right hand side walls extending downwardly from the left and right side edges of the top wall, lower left hand and right hand side walls extending upwardly from the left and right side edges of the bottom wall, and left hand and right hand joint walls connecting the top wall and the bottom wall together at their rear end edges. The upper left hand and right hand side walls and the lower left hand and right hand side walls being in contact with each other. The upper left hand and right hand side walls have left and right legs depending therefrom and extending along the exterior of the lower left hand and right hand side walls to protrude downwardly beyond the bottom wall.