Patents by Inventor Ken-Hao Fan

Ken-Hao Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11855452
    Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ken-Hao Fan, Yu-Ti Su, Tzu-Cheng Kao, Ming-Fu Tsai, Chia-Lin Hsu
  • Publication number: 20230105593
    Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.
    Type: Application
    Filed: December 9, 2022
    Publication date: April 6, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ken-Hao Fan, Yu-Ti Su, Tzu-Cheng Kao, Ming-Fu Tsai, Chia-Lin HSU
  • Patent number: 11557895
    Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: January 17, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Ken-Hao Fan, Yu-Ti Su, Tzu-Cheng Kao, Ming-Fu Tsai, Chia-Lin Hsu
  • Publication number: 20220352709
    Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.
    Type: Application
    Filed: July 29, 2021
    Publication date: November 3, 2022
    Inventors: Ken-Hao Fan, Yu-Ti Su, Tzu-Cheng Kao, Ming-Fu Tsai, Chia-Lin HSU