Abstract: An electrophotographic photoreceptor comprising a conductive support having thereon an amorphous silicon photoconductive layer and a surface protective layer is disclosed, the surface protective layer having a laminated structure comprised of a lower layer comprising nitrogen-containing amorphous silicon and an upper layer comprising amorphous carbon.The photoreceptor causes no image deletion even after repeated use under a high temperature and high humidity condition and exhibits excellent scratch resistance.

Abstract: An electrophotographic photoreceptor having a photosensitive layer essentially made of amorphous silicon formed over a support, and a surface layer made of amorphous silicon formed over the photosensitive layer. The amorphous silicon of the photosensitive layer includes boron of 0.1-5 ppm, and the amorphous silicon of the surface layer includes nitrogen. The layers of material formed over the support include a charge blocking layer.

Abstract: A photoreceptor for electrophotography, comprising: a photoconductive layer substantially composed of amorphous silicon, and first, second and third surface layers substantially composed of amorphous silicon added with nitrogen atom, those layers being formed on a support. The thickness d.sub.1, d.sub.2 and d.sub.3 of the first, second and third surface layers satisfies the following relation: d.sub.2 >d.sub.1 and d.sub.2 >d.sub.3, and the nitrogen concentrations c.sub.1, c.sub.2 and c.sub.3 of said first, second and third surface layers satisfy the following relation: c.sub.3 >c.sub.2 >c.sub.1.

Abstract: An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

Abstract: An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 .ANG. away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B.gtoreq.10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.

Abstract: An electrographic photoreceptor comprising a support, an intrinsic silicon photosensitive layer and a surface layer of amophous silicon. To the surface layer is added either hydrogen, germanium, tin or lead in order to use the dangling bonds of the amorphous carbon.