Abstract: A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Abstract: A semiconductor crystal having a recombination-inhibiting semiconductor layer of a second conductive type that is disposed in the vicinity of the surface between a base contact region and emitter regions and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.

Abstract: A semiconductor crystal having a recombination-inhibiting semiconductor layer of a second conductive type that is disposed in the vicinity of the surface between a base contact region and emitter regions and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.

Abstract: A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.

Abstract: A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Abstract: A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Abstract: A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.

Abstract: A junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: A junction semiconductor device having a drain region comprising a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region comprising a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.

Abstract: A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Abstract: A sensor element includes a light detecting section (2), a wiring section and a microlens section (7, 8). The light detecting section (2) is formed to be spaced from a substrate (1) to detect an incident light. The wiring section is composed of leg sections (3, 4) and outputting sections (11, 12) formed to be spaced from the substrate in a peripheral portion of the light detecting section. The wiring section connects the detecting result of the light detecting section to patterns on the substrate. The microlens section is formed to be spaced from the light detecting section to collect and output the incident light to the light detecting section. An area of the light detecting section is equal to or smaller than ¼ of an area of the sensor element. The sensor element may further include a reflecting film formed under the light detecting section to reflect the incident light which passes through the light detecting section.