Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Abstract: An electrically driven actuator includes a vibration damping device; and an electrically driven unit operated by using electricity. The vibration damping device includes a vibration absorbing unit provided between a first support and a second support provided to face the first support, and expanding and contracting by using electricity, a measurement unit that measures vibrations of the second support, and a control unit that electrically controls the vibration absorbing unit to cancel the vibrations of the second support which are measured by the measurement unit. The electrically driven unit includes a housing provided on a fixed side, a shaft movable in an axial direction which is a direction toward a movable side opposite to the fixed side with respect to the housing, and a drive unit provided between the housing and the shaft, and driving the shaft with respect to the housing.

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Abstract: An electrically driven actuator includes a vibration damping device; and an electrically driven unit operated by using electricity. The vibration damping device includes a vibration absorbing unit provided between a first support and a second support provided to face the first support, and expanding and contracting by using electricity, a measurement unit that measures vibrations of the second support, and a control unit that electrically controls the vibration absorbing unit to cancel the vibrations of the second support which are measured by the measurement unit. The electrically driven unit includes a housing provided on a fixed side, a shaft movable in an axial direction which is a direction toward a movable side opposite to the fixed side with respect to the housing, and a drive unit provided between the housing and the shaft, and driving the shaft with respect to the housing.

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Abstract: The present invention suppresses an increase in pressure of internally contained lubricating oil and reduces leakage of the lubricating oil. This actuator is provided with: an accumulator which has a gas compartment at the top filled with gas, and in which a lubricating oil is contained under the gas compartment; a housing internally provided with the accumulator; a shaft of which one end side is contained in the housing and another end side is disposed outside the housing, and which is moveable in an axial direction; and an oil seal disposed between a first opening portion which is formed in the accumulator and through which the shaft penetrates, and the shaft. The housing has formed therein a pipe channel providing communication between a space on the side opposite to the inner side of the accumulator with respect to the oil seal and the gas compartment of the accumulator.

Abstract: An actuator with which fixation of a sliding surface is unlikely to occur and a desired operation can be reliably performed. An actuator includes a housing, a shaft having one end side accommodated in the housing, having the other end side installed outside the housing, and movable along an axial direction, a polymer material actuator, accommodated in the housing, having one end connected to an inside of the housing, having the other end connected to the shaft, and extended and contracted by voltage application, and a movement adjustment unit adjusting a movement of the shaft in accordance with a position of the shaft. The movement adjustment unit has an electric motor installed in the housing, a cam connected to the electric motor and rotating by a drive force of the electric motor, and a cam follower provided on the shaft and abutting against the cam.

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: An information processing apparatus according to the present invention includes: a detection unit that detects detection information that is information indicating an external state of the apparatus; a communication unit that receives reception information that is a determination result given by another apparatus; and a control unit that calculates a first determination result that is a result acquired by determining a state of a surrounding of the apparatus based on the detection information and the reception information, transmits the first determination result to the another apparatus via the communication unit, and activates a necessary function for the detection unit or the communication unit and stops an unnecessary function thereof.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.