Abstract: A method of fabricating a semiconductor device includes steps of forming a gate electrode on the surface of a region of a semiconductor substrate provided with a first element, forming an insulating film to cover the surface of the gate electrode and another region of the semiconductor substrate provided with a second element and forming a sidewall insulating film covering the side surface of the gate electrode while leaving the insulating film on the region of the semiconductor substrate provided with the second element by a prescribed thickness by etching the insulating film up to an intermediate portion from the surface thereof.

Abstract: A high-performance spinel-type lithium-manganese oxide for use as a material for a positive electrode of a Li secondary battery with inhibited Mn dissolution in an organic electrolyte, which is represented by the following formula: {Li}[Lix.My.Mn(2−x−Y)]O4+d wherein { } represents the oxygen tetrahedral sites in the spinel structure and [ ] represents the oxygen octahedral sites in the spinel structure, 0<x≦0.33, 0<y≦1.0, −0.5<d<0.8, and M represents at least one heteroelement other than Li and Mn, is disclosed.

Abstract: A high-performance spinel-type lithium-manganese oxide for use as a material for a positive electrode of a Li secondary battery with inhibited Mn dissolution in an organic electrolyte, which is represented by the following formula: {Li}[Lix.My.Mn(2−x−y)]O4+d wherein { } represents the oxygen tetrahedral sites in the spinel structure and [ ] represents the oxygen octahedral sites in the spinel structure, 0<x≦0.33, 0<y≦1.0, −0.5<d<0.8, and M represents at least one heteroelement other than Li and Mn, is disclosed.

Abstract: A novel lithium-manganese oxide composition suitable for use in lithium secondary batteries as an active material for positive electrodes, said oxide having a spinel type crystal structure, an Li:Mn molar ratio of 0.9-1.10:2.00, a mean Mn oxidation number of 3.40-3.60 valencies, and a BET specific surface area of at least 1 m.sup.2 /g, substantially all the primary particles of said oxide being less than 1 .mu.m; a process for preparing such an oxide and a lithium secondary battery containing such an oxide are also disclosed.

Abstract: An analog arithmetic circuit for executing multiplications, divisions, compressions, expansions and combinations thereof. The arithmetic circuit is provided with a .DELTA..SIGMA. modulator comprising an A/D converter and a first D/A converter, a second D/A converter for receiving the output from the .DELTA..SIGMA. modulator, and a low-pass filter which receives the output of the second D/A converter and outputs the result of an arithmetic operation. The arithmetic circuit can be fabricated in the form of a MOS LSI because it does not use a precise triangle waveform generator for pulse width modulation.

Abstract: A secondary battery which comprises a positive-electrode material, an electrolyte solution, a negative-electrode material comprising zinc, and a negative-electrode substrate made of lead or a lead alloy. In a modification, the negative-electrode substrate is made of an electro-conductive material, with the surface thereof being coated with lead or a lead alloy. The battery is free from dendrite short-circuit and has an improved cycle life.

Abstract: In a display managing arrangement comprising a display memory and a display memory controller for accessing the display memory to display a selected area of an image datum with the selected area scrolled on the image datum or otherwise subjected to management, the display memory is divided into memory blocks arranged as an N-row M-column matrix. Each memory block is for use as a unit of the management and is divisible into memory elements arranged as an n-row m-column matrix.