Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: According to an embodiment, a transport control device includes a storage unit, a control unit, and a communication unit. The storage unit is configured to store positional information relating to racks included in a plurality of rack groups provided at predetermined intervals, an outer aisle around the rack groups, an under-rack aisle under each of the racks, and a rack area in which a rack retrieved from the rack groups by a transport vehicle is placed, and management information for managing the racks. The control unit is configured to output a control signal for controlling the transport vehicle based on the positional information and the management information. The communication unit is configured to transmit the control signal to the transport vehicle.

Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: An electromagnetic relay including a body, a plurality of first surface-mount terminals projecting from the body, and at least one second terminal projecting from the body. Each first terminal includes a distal end portion adapted to be mounted on a surface of a circuit board. The second terminal includes a distal end portion adapted to be inserted into a through-hole of a circuit board. The distal end portion of the second terminal is positioned farther away from the body than the distal end portion of the first terminal.

Abstract: A method for manufacturing a semiconductor physical quantity sensor having a fixed portion, a movable portion and an output terminal includes: forming a metal layer on a semiconductor layer; forming a resist on the metal layer; forming an opening and a side etching hole in the resist; anisotropically etching the metal layer via the opening and the hole; anisotropically etching the semiconductor layer via the opening so that the fixed portion is formed in the semiconductor layer; and side etching the metal layer from the opening and the hole so that the output terminal is formed on a part of the fixed portion, and a metal member is formed on another part of the fixed portion in such a manner that the metal member is electrically separated from the output terminal.

Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

Abstract: A method for positioning a dicing line includes the steps of: bonding an adhesive tape on a semiconductor layer of a wafer; detecting an image of the wafer by an imaging device on the basis of a light transmitted through the wafer; and determining the dicing line of the wafer on the basis of a position of an image of a marker, which is disposed on the semiconductor layer of the wafer. The image of the marker is obtained by image recognition from the detected image of the wafer.

Abstract: An electromagnetic relay including a body, a plurality of first surface-mount terminals projecting from the body, and at least one second terminal projecting from the body. Each first terminal includes a distal end portion adapted to be mounted on a surface of a circuit board. The second terminal includes a distal end portion adapted to be inserted into a through-hole of a circuit board. The distal end portion of the second terminal is positioned farther away from the body than the distal end portion of the first terminal.

Abstract: A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

Abstract: A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.

Abstract: A method for manufacturing a semiconductor physical quantity sensor having a fixed portion, a movable portion and an output terminal includes: forming a metal layer on a semiconductor layer; forming a resist on the metal layer; forming an opening and a side etching hole in the resist; anisotropically etching the metal layer via the opening and the hole; anisotropically etching the semiconductor layer via the opening so that the fixed portion is formed in the semiconductor layer; and side etching the metal layer from the opening and the hole so that the output terminal is formed on a part of the fixed portion, and a metal member is formed on another part of the fixed portion in such a manner that the metal member is electrically separated from the output terminal.

Abstract: A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

Abstract: An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

Abstract: A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.

Abstract: A positive tone radiation-sensitive resin composition comprising (A) a 1-substituted imidazole, (B) a photoacid generator, and (C-a) a resin protected by an acid-dissociable group, insoluble or scarcely soluble in alkali, but becoming soluble in alkali when the acid-dissociable group dissociates or (C-b) an alkali-soluble resin and an alkali solubility controller, and a negative tone radiation-sensitive resin composition comprising (A), (B), (D) an alkali-soluble resin, and (E) a compound that can crosslink the alkali-soluble resin in the presence of an acid. The radiation-sensitive resin composition of the present invention is a chemically amplified resist exhibiting high resolution and high storage stability as a composition, and suitable for microfabrication sensible to active radiations, for example, ultraviolet rays such as g-lines and i-lines, deep ultraviolet rays represented by a KrF excimer laser, ArF excimer laser, F2 excimer laser, and EUV excimer laser, and electron beams.

Abstract: A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.

Abstract: A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.

Abstract: A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

Abstract: A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.