Abstract: An on-board component abnormal site identifying method includes executing an acquisition process, a calculation process, and a reporting process by an execution device. The acquisition process is a process for acquiring, by the execution device, values of input variables. The mapping includes, as the input variables, a foreign substance variable, and includes, as an output variable, an abnormal site variable. The calculation process is a process for calculating, by the execution device, a value of the abnormal site variable by inputting, to the mapping, the values of the input variables acquired through the acquisition process. The reporting process is a process for reporting, by the execution device, a calculation result of the calculation process by operating a reporting device.

Abstract: Mapping data and data on individual difference variables are stored in a storage device. The mapping data are data that define a mapping including the individual difference variables and a sound variable in an input variable and including determination result variables in an output variable. The sound variable is a variable regarding noise generated by a vehicle, and the determination result variables are variables indicating a determination result of which of possible parts is the cause of the noise. A value of the input variable is acquired, the acquired value of the input variable is an input to the mapping to calculate a value of the output variable, and a notification device is operated to notify of a calculation result.

Abstract: An oil condition estimation apparatus to be applied to a vehicle in which oil is agitated by a rotator includes a storage device and an execution device. The storage device stores mapping data for defining mapping. The mapping includes, as input variables, a speed variable indicating a rotation speed of the rotator, and a pressure variable indicating a pressure of the oil, and includes, as an output variable, an air bubble variable related to air bubbles contained in the oil. The execution device executes an acquisition process for acquiring values of the input variables, and a calculation process for calculating a value of the output variable by inputting, to the mapping, the values of the input variables acquired through the acquisition process.

Abstract: There is provided a method of specifying a location of occurrence of an abnormal sound, the method including: storing mapping data in a storage device, the mapping data prescribing mapping that receives, as inputs, a sound variable that matches a sound detected in a vehicle and a state variable of a drive-system device of the vehicle synchronized with the sound, and that outputs a location as a main cause of the sound; executing a sound signal acquisition process of acquiring a sound signal output from a microphone that detects a sound; a state variable acquisition process of acquiring the state variable of the drive-system device; and a specifying process of specifying the location of occurrence of the sound corresponding to the sound signal using the sound variable and the state variable as inputs to the mapping. There are also provided a non-transitory storage medium and an in-vehicle device.

Abstract: Provided is a lockup control device and a lockup control method for a vehicle power transmission device provided with a fluid transmission device including a lockup clutch. The lockup clutch is controlled to perform slip-engagement such that a differential rotation between an input-side rotating member and an output-side rotating member of the fluid transmission device is a target differential rotation set in advance, and the target differential rotation is corrected based on transition of a heat accumulation amount applied to friction members of the lockup clutch.

Abstract: A driving apparatus is controlled by using a driving command that is obtained by applying an accelerator operation amount to a relation between the accelerator operation amount and the driving command for the driving apparatus, and the relation is set by using a distribution of usage of the driving command by a driver such that a gradient that is a change in the driving command with a change in the accelerator operation amount in a high usage range including a value having a longest usage time among values of the driving command is less than the gradient in a range other than the high usage range.

Abstract: A vehicle control apparatus for controlling a control-subject component provided in a vehicle, by using a learning value of a control parameter which is obtained by a learning operation. The control apparatus includes an obtaining portion for obtaining information related to converged values of learning values of control parameters in a plurality of vehicles provided with respective control-subject components which are the same in type as the control-subject component provided in the vehicle, and a variation determination portion for determining whether a degree of variation among the converged values in the respective vehicles is smaller than a threshold value. The vehicle control apparatus causes the learning value to be converged by a smaller number of times of execution of the learning operation when the degree of the variation is smaller than the threshold value, than when the degree of the variation is not smaller than the threshold value.

Abstract: The toughness of a laminate is improved. A fiber-reinforced resin material contains a fiber material in a resin; and the fiber material contains high-rigidity fibers and fibroin fibers. According to the present invention, a laminate is formed by laminating and bonding a plurality of fiber-reinforced resin layers. A fiber-reinforced resin layer contains the high-rigidity fibers in a resin. A fiber-reinforced resin layer contains the fibroin fibers in a resin.

Abstract: A threshold that is used in determining, based on a deviation between slip amounts, whether to stop slip control or not during the performance of feedback control in slip control is made smaller when pitch damping control is being performed than when pitch damping control is not being performed, during the performance of slip control of a lockup clutch. Therefore, slip control is likely to be stopped when the torque input to the lockup clutch is likely to fluctuate. In consequence, a control apparatus and a control method for a vehicle that make it possible to stably perform slip control of the lockup clutch while increasing the number of opportunities to perform the slip control and pitch damping control are provided.

Abstract: A threshold that is used in determining, based on a deviation between slip amounts, whether to stop slip control or not during the performance of feedback control in slip control is made smaller when pitch damping control is being performed than when pitch damping control is not being performed, during the performance of slip control of a lockup clutch. Therefore, slip control is likely to be stopped when the torque input to the lockup clutch is likely to fluctuate. In consequence, a control apparatus and a control method for a vehicle that make it possible to stably perform slip control of the lockup clutch while increasing the number of opportunities to perform the slip control and pitch damping control are provided.

Abstract: The present invention relates to a TFT substrate, and a pixel includes a gate electrode selectively provided on a substrate, a gate insulating film covering the gate electrode, a semiconductor channel layer selectively provided on the gate insulating film, a protective insulating film provided on the semiconductor channel layer, a first interlayer insulating film provided on the substrate, a source electrode and a drain electrode that are separated from each other and directly in contact with the semiconductor channel layer via respective contact holes penetrating the first interlayer insulating film and the protective insulating film, and a pixel electrode extending from the drain electrode. A first light shielding film is provided on the protective insulating film to overlap with at least a channel region in plan view, and a second light shielding film is provided on the source electrode and the drain electrode to overlap with the semiconductor channel layer and the first light shielding film in plan view.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A solenoid valve includes a valve housing in which a spool valve element is fitted to be reciprocably slidable along an axis; a magnet coil that moves the spool valve element in a first direction along the axis by an action of an electromagnetic force; a return spring that biases the spool valve element in a second direction, opposite to the first direction, and moves the spool valve element in the second direction when the magnet coil is not excited; and first and second attraction members that are respectively fixed to the spool valve element and the valve housing such that they are spaced from each other along the axis by a distance no less than a maximum moving amount of the spool valve element and attract each other by an attraction force smaller than a bias force of the return spring when the magnet coil is not excited.