Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.