Abstract: A semiconductor memory device includes a substrate that includes a first region and a second region. The first region includes: a plurality of first word line layers; a first semiconductor layer having an outer peripheral surface opposed to the plurality of first word line layers; and a first electric charge accumulating film disposed between the plurality of first word line layers and the first semiconductor layer. The second region includes: a part of the plurality of first word line layers; a plurality of first insulating layers, the plurality of first insulating layers; a first contact having an outer peripheral surface opposed to the plurality of first insulating layers; a second semiconductor layer disposed between the plurality of first word line layers and the plurality of first insulating layers; and a second electric charge accumulating film disposed between the plurality of first insulating layers and the second semiconductor layer.

Abstract: A semiconductor memory device includes a substrate that includes a first region and a second region. The first region includes: a plurality of first word line layers; a first semiconductor layer having an outer peripheral surface opposed to the plurality of first word line layers; and a first electric charge accumulating film disposed between the plurality of first word line layers and the first semiconductor layer. The second region includes: a part of the plurality of first word line layers; a plurality of first insulating layers, the plurality of first insulating layers; a first contact having an outer peripheral surface opposed to the plurality of first insulating layers; a second semiconductor layer disposed between the plurality of first word line layers and the plurality of first insulating layers; and a second electric charge accumulating film disposed between the plurality of first insulating layers and the second semiconductor layer.

Abstract: The present invention provides a method of forming a circuit pattern on an integrally bonded member, the method not requiring a correction step of a laminate film or a resist film which has been necessary at the time of wet treatment of the integrally bonded member. After a circuit pattern forming metal plate is bonded on a part of a ceramic substrate so as to expose an outer peripheral edge portion of the ceramic substrate in an integrally bonded member, the integrally bonded member is set on a treating apparatus while being covered with a masking member having a window portion from which the circuit pattern forming metal plate of the integrally bonded member is exposed.

Abstract: The present invention provides a method of forming a circuit pattern on an integrally bonded member, the method not requiring a correction step of a laminate film or a resist film which has been necessary at the time of wet treatment of the integrally bonded member. After a circuit pattern forming metal plate 13 is bonded on a part of a ceramic substrate 12 so as to expose an outer peripheral edge portion of the ceramic substrate 12 in an integrally bonded member 10, the integrally bonded member 10 is set on a treating apparatus 30 while being covered with a masking member 20 having a window portion 22 from which the circuit pattern forming metal plate 13 of the integrally bonded member 10 is exposed.

Abstract: There is provided a metal/ceramic bonding substrate capable of preventing the reverse thereof from greatly warping so as to be concave even if it is heated for soldering. In the metal/ceramic bonding substrate, a metal circuit plate 12 is bonded to one side of a ceramic substrate 10, and a heat sink plate (metal base plate) 14 is bonded to the other side thereof. On the heat sink plate 14, a work-hardened layer 16 is formed by shot peening. On the metal circuit plate 12 of the metal/ceramic bonding substrate, semiconductor chips (Si chips) 18 are soldered (solder layer 20). Then, a power module is produced by a predetermined process. On the reverse (the side of the work-hardened layer 16) of the power module, a radiating fin 26 is mounted via a thermal grease 24 by means of screws 22 or the like.

Abstract: In a method for producing a metal/ceramic bonding member wherein an electroless nickel alloy plating layer 18 is formed on a predetermined portion of the surface of an aluminum plate 12 which is bonded to at least one side of a ceramic substrate 10 and which is formed so as to have a predetermined circuit pattern, an alkali peeling type resist 16 having a predetermined shape is applied on the surface of the aluminum plate 12 before forming the electroless nickel alloy plating layer 18, and then, a portion of the surface of the aluminum plate 12, on which the resist 16 is not applied, is activated with an acidic zinc immersion solution containing a fluoride or silicofluoride. Then, after the electroless nickel alloy plating layer 18 is formed, the resist 16 is removed with an alkali.

Abstract: The present invention provides a combined member of aluminum-ceramics. The combined member comprises a ceramic board, a conductive member holding electronic parts thereon, formed on one surface of the ceramic board, and a water cooling jacket of aluminum or aluminum alloy bonded directly on the other surface of the ceramic board.

Abstract: There is provided a metal/ceramic bonding substrate capable of preventing the reverse thereof from greatly warping so as to be concave even if it is heated for soldering. In the metal/ceramic bonding substrate, a metal circuit plate 12 is bonded to one side of a ceramic substrate 10, and a heat sink plate (metal base plate) 14 is bonded to the other side thereof. On the heat sink plate 14, a work-hardened layer 16 is formed by shot peening. On the metal circuit plate 12 of the metal/ceramic bonding substrate, semiconductor chips (Si chips) 18 are soldered (solder layer 20). Then, a power module is produced by a predetermined process. On the reverse (the side of the work-hardened layer 16) of thepowermodule, a radiating fin 26 is mounted via a thermal grease 24 by means of screws 22 or the like.

Abstract: The surface to be plated of a composite made of a metallic and a non-metallic material is degreased and otherwise cleaned and immersed in a palladium activator fluid conditioned with a hydrogencarbonate to a pH of 2˜5. After this pretreating process, the composite is plated with a metal and becomes most suitable for use as a material for heat sink on hybrid ICs since it can be efficiently soldered and has better corrosion resistance.

Abstract: The present invention provides a combined member of aluminum-ceramics. The combined member comprises a ceramic board, a conductive member holding electronic parts thereon, formed on one surface of the ceramic board, and a water cooling jacket of aluminum or aluminum alloy bonded directly on the other surface of the ceramic board.

Abstract: The present invention provides a method of forming a circuit pattern on an integrally bonded member, the method not requiring a correction step of a laminate film or a resist film which has been necessary at the time of wet treatment of the integrally bonded member. After a circuit pattern forming metal plate 13 is bonded on a part of a ceramic substrate 12 so as to expose an outer peripheral edge portion of the ceramic substrate 12 in an integrally bonded member 10, the integrally bonded member 10 is set on a treating apparatus 30 while being covered with a masking member 20 having a window portion 22 from which the circuit pattern forming metal plate 13 of the integrally bonded member 10 is exposed.

Abstract: The surface to be plated of a composite made of a metallic and a non-metallic material is degreased and otherwise cleaned and immersed in a palladium activator fluid conditioned with a hydrogencarbonate to a pH of 2˜5. After this pretreating process, the composite is plated with a metal and becomes most suitable for use as a material for heat sink on hybrid ICs since it can be efficiently soldered and has better corrosion resistance.