Abstract: A backlight unit includes a light-guide plate, a light source, and a phosphor sheet including a red phosphor material. The light source includes blue light emitting diodes, and green semiconductor lasers. The red phosphor material is excited by light from the blue light emitting diodes and emits red light. The phosphor sheet is solid and disposed on a surface of a first principal plane of the light-guide plate to define a first mixing light emission surface on the first principal plane of the light-guide plate from which green light emitted from the green semiconductor lasers and blue light from the blue light emitting diodes are emitted toward the phosphor sheet and a second mixing light emission surface on the phosphor sheet from which red light emitted from the red phosphor material, green light emitted from the green semiconductor lasers, and blue light from the blue light emitting diodes are emitted.

Abstract: A backlight unit includes a light-guide plate, a light source, and a phosphor sheet including a red phosphor material. The light source includes blue light emitting diodes, and green semiconductor lasers. The red phosphor material is excited by light from the blue light emitting diodes and emits red light. The phosphor sheet is solid and disposed on a surface of a first principal plane of the light-guide plate to define a first mixing light emission surface on the first principal plane of the light-guide plate from which green light emitted from the green semiconductor lasers and blue light from the blue light emitting diodes are emitted toward the phosphor sheet and a second mixing light emission surface on the phosphor sheet from which red light emitted from the red phosphor material, green light emitted from the green semiconductor lasers, and blue light from the blue light emitting diodes are emitted.

Abstract: A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths. The red phosphor material is included in a phosphor sheet, and the phosphor sheet is disposed on a surface of the light-guide plate.

Abstract: A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths. The red phosphor material is included in a phosphor sheet, and the phosphor sheet is disposed on a surface of the light-guide plate.

Abstract: A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths. The red phosphor material is included in a phosphor sheet, and the phosphor sheet is disposed on a surface of the light-guide plate.

Abstract: A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths.

Abstract: A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths.

Abstract: A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer each laminated on the main surface of the substrate. The nitride semiconductor laser element further includes a striped ridge portion formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region for reducing the capacitance of the element.

Abstract: The invention discloses that a nitride semiconductor laser element is able to comply with requirement of high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer (205) and a p-type semiconductor layer each laminated on the main surface of the substrate (101) and comprising a nitride, wherein a striped ridge portion (2) is formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region (1) for reducing the capacitance of the element.