Patents by Inventor Ken Kaung Lai
Ken Kaung Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190088485Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.Type: ApplicationFiled: August 13, 2018Publication date: March 21, 2019Inventors: Matthew Scott ROGERS, Roger CURTIS, Lara HAWRYLCHAK, Ken Kaung LAI, Bernard L. HWANG, Jeffrey TOBIN, Christopher S. OLSEN, Malcolm BEVAN
-
Patent number: 10049881Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.Type: GrantFiled: June 28, 2012Date of Patent: August 14, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Matthew S. Rogers, Roger Curtis, Lara Hawrylchak, Ken Kaung Lai, Bernard L. Hwang, Jeffrey Tobin, Christopher Olsen, Malcolm J. Bevan
-
Patent number: 9031685Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.Type: GrantFiled: January 7, 2014Date of Patent: May 12, 2015Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence C. Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Publication number: 20140130739Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.Type: ApplicationFiled: January 7, 2014Publication date: May 15, 2014Inventors: Barry L. CHIN, Alfred W. MAK, Lawrence C. LEI, Ming XI, Hua CHUNG, Ken Kaung LAI, Jeong Soo BYUN
-
Patent number: 8626330Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.Type: GrantFiled: September 19, 2011Date of Patent: January 7, 2014Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Publication number: 20130040444Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.Type: ApplicationFiled: June 28, 2012Publication date: February 14, 2013Applicant: Applied Materials, Inc.Inventors: MATTHEW S. ROGERS, Roger Curtis, Lara Hawrylchak, Ken Kaung Lai, Bernard L. Hwang, Jeffrey Tobin, Christopher Olsen, Malcom J. Bevan
-
Publication number: 20120006265Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.Type: ApplicationFiled: September 19, 2011Publication date: January 12, 2012Inventors: BARRY L. CHIN, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Patent number: 8027746Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: November 23, 2010Date of Patent: September 27, 2011Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Publication number: 20110111603Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: ApplicationFiled: November 23, 2010Publication date: May 12, 2011Inventors: BARRY L. CHIN, ALFRED W. MAK, LAWRENCE CHUNG-LAI LEI, MING XI, HUA CHUNG, KEN KAUNG LAI, JEONG SOO BYUN
-
Patent number: 7860597Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: December 23, 2009Date of Patent: December 28, 2010Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Patent number: 7745333Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.Type: GrantFiled: July 24, 2008Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Avgerinos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
-
Patent number: 7709385Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.Type: GrantFiled: December 16, 2008Date of Patent: May 4, 2010Assignee: Applied Materials, Inc.Inventors: Ming Xi, Ashok Sinha, Moris Kori, Alfred W. Mak, Xinliang Lu, Ken Kaung Lai, Karl A. Littau
-
Publication number: 20100099270Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: ApplicationFiled: December 23, 2009Publication date: April 22, 2010Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Patent number: 7695563Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.Type: GrantFiled: January 8, 2007Date of Patent: April 13, 2010Assignee: Applied Materials, Inc.Inventors: Xinliang Lu, Ping Jian, Jong Hyun Yoo, Ken Kaung Lai, Alfred W. Mak, Robert L. Jackson, Ming Xi
-
Patent number: 7660644Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: June 12, 2006Date of Patent: February 9, 2010Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
-
Publication number: 20090156003Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.Type: ApplicationFiled: December 16, 2008Publication date: June 18, 2009Inventors: MING XI, Ashok Sinha, Moris Kori, Alfred W. Mak, Xinliang Lu, Ken Kaung Lai, Karl A. Littau
-
Publication number: 20080317954Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.Type: ApplicationFiled: January 8, 2007Publication date: December 25, 2008Inventors: XINLIANG LU, Ping Jian, Jong Hyun Yoo, Ken Kaung Lai, Alfred W. Mak, Robert L. Jackson, Ming Xi
-
Patent number: 7465665Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.Type: GrantFiled: May 15, 2007Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Ming Xi, Ashok Sinha, Moris Kori, Alfred W. Mak, Xinliang Lu, Ken Kaung Lai, Karl A. Littau
-
Publication number: 20080280438Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.Type: ApplicationFiled: July 24, 2008Publication date: November 13, 2008Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Aygerinos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
-
Patent number: 7405158Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.Type: GrantFiled: January 19, 2005Date of Patent: July 29, 2008Assignee: Applied Materials, Inc.Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Averginos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun