Abstract: If an output voltage increases higher than a first limit voltage, a first output transistor is controlled such that the output voltage approaches the first limit voltage, and if the output voltage decreases lower than a second limit voltage, a second output transistor is controlled such that the output voltage approaches the second limit voltage. As a result, it is possible to limit the range of the output voltage and to reduce power consumption, without an increase in an output current at the time of limiter operation, differently from a voltage limiter circuit of the related art.

Abstract: A manufacturing method is used for a current sensor including a current measurement circuit configured to include magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a set first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit, adjust a sensitivity, and correct, based on a set second correction amount, a magnitude of the offset, and a substrate in which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, wherein after the first correction amount is set based on characteristics of the magnetoelectric conversion elements, the magnetoelectric conversion elements are mounted in the substrate and the second correction amount is set.

Abstract: If an output voltage increases higher than a first limit voltage, a first output transistor is controlled such that the output voltage approaches the first limit voltage, and if the output voltage decreases lower than a second limit voltage, a second output transistor is controlled such that the output voltage approaches the second limit voltage. As a result, it is possible to limit the range of the output voltage and to reduce power consumption, without an increase in an output current at the time of limiter operation, differently from a voltage limiter circuit of the related art.

Abstract: A manufacturing method is used for a current sensor including a current measurement circuit configured to include magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a set first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit, adjust a sensitivity, and correct, based on a set second correction amount, a magnitude of the offset, and a substrate in which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, wherein after the first correction amount is set based on characteristics of the magnetoelectric conversion elements, the magnetoelectric conversion elements are mounted in the substrate and the second correction amount is set.

Abstract: A capacitance detecting circuit detects, in terms of voltage, change in capacitance at intersections of a plurality of column lines and a plurality of row lines crossing each other. The capacitance detecting circuit includes a column-line driving unit for driving a column line; a row-line selector for selecting a specific row line from the plurality of row lines; and a capacitance calculator for calculating a capacitance at an intersection of the specific row line and the driven column line based on a reference current that flows in relation to a reference capacitance and a current that flows in relation to the capacitance at the intersection.

Abstract: The electrostatic capacity detecting sensor includes first electrodes which extend from column wiring lines, second electrodes which extend from row wiring lines and are formed on a layer different from that of the first electrodes, a third electrode which is electrically independent from the first electrode and the second electrode through an insulating film, a first electrostatic capacity region C1 formed between the first electrodes and the third electrode, and a second electrostatic capacity region C2 formed between the second electrodes and the third electrode.

Abstract: A capacitance detection-type sensor detects an electrostatic capacitance between a subject to be detected and a detection electrode arranged on a surface of the sensor and detects the shape of the subject to be detected. The capacitance detection-type sensor includes a reference electrode that is arranged near the detection electrode and detects a potential of the subject to be detected and a potential detecting section that measures a detection potential based on the electrostatic capacitance of the detection electrode with the potential as a reference potential.

Abstract: A shift register circuit includes a first shift register having a plurality of stages connected in cascade, and a second shift register having more stages than the first shift register. The stages of the second shift register are divided into groups each formed of consecutive stages. The stages of the first shift register output pulse sequences having a predetermined number of consecutive pulses and having different phases from each other, to the stages constituting the groups of the second shift register as clock signals.

Abstract: A capacitance detecting circuit detects, in terms of voltage, change in capacitance at intersections of a plurality of column lines and a plurality of row lines crossing each other. The capacitance detecting circuit includes a column-line driving unit for driving a column line; a row-line selector for selecting a specific row line from the plurality of row lines; and a capacitance calculator for calculating a capacitance at an intersection of the specific row line and the driven column line based on a reference current that flows in relation to a reference capacitance and a current that flows in relation to the capacitance at the intersection.

Abstract: A surface pressure distribution sensor includes a row-line portion and a column-line portion that face each other with a certain spacing therebetween by a spacer. The row-line portion includes a glass substrate, multiple row lines formed on the glass substrate so as to extend in parallel to each other in a first direction, and an insulating film that covers the row lines. The column-line portion includes a flexible film and multiple column lines formed on the flexible film so as to extend in parallel to each other in a second direction orthogonal to the first direction.

Abstract: A surface pressure distribution sensor includes a row-line portion and a column-line portion that face each other with a certain spacing therebetween by a spacer. The row-line portion includes a glass substrate, multiple row lines formed on the glass substrate so as to extend in parallel to each other in a first direction, and an insulating film that covers the row lines. The column-line portion includes a flexible film and multiple column lines formed on the flexible film so as to extend in parallel to each other in a second direction orthogonal to the first direction.

Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate opposed to the first substrate, liquid crystals disposed between the first and second substrates, and a DC power supply. The first substrate has a plurality of scanning lines; a plurality of signal lines, the scanning lines and the signal lines being arranged in a matrix; display electrodes provided in the areas partitioned by the scanning lines and the signal lines; thin film transistors (TFTs) provided in the areas partitioned by the scanning lines and the signal lines and connected to the display electrodes; shield electrodes covering the respective scanning lines at least partly; and an insulating film disposed between the shield electrodes and the scanning lines. The shield electrodes are electrically connected to the DC power supply.

Abstract: An active matrix type liquid crystal display device has a plurality of data lines and a plurality of gate lines formed on a substrate in matrix fashion, TFTs and pixel electrodes being provided at both sides of the data lines so as to correspond with each of the plurality of gate lines, and the plurality of gate lines are positioned such that the pixel electrodes at both sides of the data lines are controlled by signals from one of the two gate lines sandwiching the pixel electrodes, i.e., either the first or second gate line. Also, the gate electrodes comprising TFTs are comprised of gate lines themselves, so that the drain electrodes electrically connected to the pixel electrodes traverse the gate electrodes. Thus, the pixels can be driven with fewer data lines than with known arrangements.

Abstract: A shift register circuit includes a first shift register having a plurality of stages connected in cascade, and a second shift register having more stages than the first shift register. The stages of the second shift register are divided into groups each formed of consecutive stages. The stages of the first shift register output pulse sequences having a predetermined number of consecutive pulses and having different phases from each other, to the stages constituting the groups of the second shift register as clock signals.

Abstract: A shift register has m stages which store one of two states, where m is an integer more than 1, each stage including clock input terminals at which n-phase clock signals are input, where n is an integer more than 1, and an input terminal, and an output terminal. The input terminal of one stage receives the signal delivered from an input terminal of the shift register or from the output terminal of the previous stage. The signal output at the output terminal of one stage is passed to the input terminal of the subsequent stage or to an output terminal of the shift register. Each stage receives an initial state level from one of the clock input terminals. The initial state level is used to initialize the state of each stage.

Abstract: An image display device includes a display panel having predetermined numbers of pixels defined in horizontal and vertical directions, respectively, and an interpolated-data generation circuit whereby an expanded image data is produced in such a manner that when the number of pixels in the horizontal direction of the display panel is greater than the number of pixels in the horizontal direction of a given image signal, the interpolated-data generation circuit directly stores a plurality of image data A, B, C, D, E of the original image signal along one horizontal line at data storage locations closest to the original locations, and data at data storage locations remaining after storing all original data are given the results X, Y, and Z obtained by calculation from two original image data at locations adjacent to the respective remaining data storage locations thereby expanding the original image signal to have a resolution well matched to the resolution of the display panel without causing a reduction in con

Abstract: An active matrix type liquid crystal display device has a plurality of data lines and a plurality of gate lines formed on a substrate in matrix fashion, TFTs and pixel electrodes being provided at both sides of the data lines so as to correspond with each of the plurality of gate lines, and the plurality of gate lines are positioned such that the pixel electrodes at both sides of the data lines are controlled by signals from one of the two gate lines sandwiching the pixel electrodes, i.e., either the first or second gate line. Also, the gate electrodes comprising TFTs are comprised of gate lines themselves, so that the drain electrodes electrically connected to the pixel electrodes traverse the gate electrodes. Thus, the pixels can be driven with fewer data lines than with known arrangements.

Abstract: A liquid crystal display device includes an insulating layer disposed between the source lines and the transparent electrodes on one substrate. Transparent pixel electrodes adjacent to both sides of one of the source lines overlap the source line with different overlapping widths and an auxiliary capacitor is formed to cancel the difference in the amount of parasitic capacitance generated due to the overlap of the individual transparent pixel electrodes with the source line.

Abstract: A shift register has m stages which store one of two states, where m is an integer more than 1, each stage including clock input terminals at which n-phase clock signals are input, where n is an integer more than 1, and an input terminal, and an output terminal. The input terminal of one stage receives the signal delivered from an input terminal of the shift register or from the output terminal of the previous stage. The signal output at the output terminal of one stage is passed to the input terminal of the subsequent stage or to an output terminal of the shift register. Each stage receives an initial state level from one of the clock input terminals. The initial state level is used to initialize the state of each stage.

Abstract: An active-matrix liquid crystal display has storage capacitors each having a small area relative to the area of each of pixel electrodes and has a large aperture ratio. A plurality of gate lines are formed on a lower substrate and a plurality of source lines are formed on the lower substrate so as to extend perpendicularly to the gate lines. Thin-film transistors are formed near the intersections of the gate lines and the source lines. Pixel electrodes are connected to the thin-film transistors and storage capacitors. Each storage capacitor includes an upper electrode, a lower electrode disposed opposite to the upper electrode, and an insulating film sandwiched between the upper and the lower electrode. The insulating film for the storage capacitors and gate insulating film for the thin-film transistors are formed separately.