Patents by Inventor Ken Kurosu

Ken Kurosu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser diode epitaxial wafer and method for producing same
    Patent number: 7915634
    Abstract: A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017 cm?3 and 1.5×1018 cm?3.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: March 29, 2011
    Assignee: Hitachi Cable, Ltd.
    Inventor: Ken Kurosu
  • Laser diode epitaxial wafer and method for producing same
    Publication number: 20100150197
    Abstract: A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017 cm?3 and 1.5×1018 cm?3.
    Type: Application
    Filed: February 22, 2010
    Publication date: June 17, 2010
    Applicant: HITACHI CABLE, LTD.
    Inventor: Ken Kurosu
  • Laser diode epitaxial wafer and method for producing same
    Patent number: 7727792
    Abstract: A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer are formed of an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration in the range of not less than 8.0×1017 cm?3 and not more than 1.5×1018 cm?3.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: June 1, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventor: Ken Kurosu
  • Laser diode expitaxial wafer and method for producing same
    Publication number: 20090110018
    Abstract: A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer are formed of an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration in the range of not less than 8.0×1017 cm?3 and not more than 1.5×1018 cm?3.
    Type: Application
    Filed: March 7, 2008
    Publication date: April 30, 2009
    Applicant: Hitachi Cable, Ltd.
    Inventor: Ken Kurosu