Abstract: A MEMS device having a proof mass resiliently mounted above a substrate has projections formed on adjacent surfaces of the mass and substrate. The device is formed by creating a plurality of holes in the upper layer. A substance suitable for removing the intermediate layer without substantially removing the upper layer and substrate is introduced through the holes. A substance removing the upper layer, the substrate, or both, is then introduced through the holes to remove a small amount of the substrate and upper layer. Portions of the intermediate layer between the projections are then removed. The dimple structure fabricated from this process will prevent MEMS device stiction both in its final release and device operation.

Abstract: Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

Abstract: A MEMS device having a proof mass resiliently mounted above a substrate has projections formed on adjacent surfaces of the mass and substrate. The device is formed by creating a plurality of holes in the upper layer. A substance suitable for removing the intermediate layer without substantially removing the upper layer and substrate is introduced through the holes. A substance removing the upper layer, the substrate, or both, is then introduced through the holes to remove a small amount of the substrate and upper layer. Portions of the intermediate layer between the projections are then removed. The dimple structure fabricated from this process will prevent MEMS device stiction both in its final release and device operation.