Abstract: A method of manufacturing a semiconductor memory device is provided in the present invention, including steps of providing a substrate, forming word lines extending in a first direction in said substrate, forming bit lines extending in a second direction over said word lines, forming partition structures between said bit lines and right above said word lines, forming storage node contacts in spaces defined by said bit lines and said partition structures, wherein a portion of said storage node contact protruding from top surfaces of said bit lines and said partition structures is contact pad, forming a silicon nitride liner on said contact pads, said bit lines and said partition structures, and forming a silicon oxide layer on said silicon nitride liner.

Abstract: A supporting device is adapted to be mounted on a rack and includes a longitudinal portion, a first mounting portion, and an elastic member. The first mounting portion and the elastic member are both provided on the longitudinal portion. The elastic member is configured to be in one of a locking state and a non-locking state. The elastic member is provided with a second mounting portion. When the first mounting portion is mounted on the rack and the elastic member is in the non-locking state, the second mounting portion is not mounted on the rack. When the first mounting portion is mounted on the rack and the elastic member is in the locking state, the second mounting portion is mounted on the rack.

Abstract: A slide rail assembly includes a first rail, a second rail, a third rail, a fourth rail and a fifth rail. The second rail and the third rail are respectively movable relative to the first rail. Each of the second rail and the third rail is formed with a passage. The fourth rail and the fifth rail are configured to be accommodated in the passages of the second rail and the third rail respectively.

Abstract: The present disclosure relates to a semiconductor memory device and a fabricating method thereof, and the semiconductor memory device includes a substrate, bit lines, plugs and a spacer structure. The bit lines are separately disposed on the substrate, and the plugs are also disposed on the substrate to alternately arrange with the bit lines. The spacer structure is disposed on the substrate, between each of the bit lines and each of the plugs. The spacer structure includes a first air gap layer, a first spacer and a second air gap layer, and the first air gap layer, the first spacer and the second air gap layer are sequentially stacked between sidewalls of the bit lines and the plugs. Therefore, two air gap layers may be formed between the bit lines and the storage node contacts to improve the delay between the resistor and the capacitor.

Abstract: A slide rail assembly comprises a first rail, a second rail and a handle. When the handle is moved from a first operating position to a second operating position, the handle is configured to unlock the second rail relative to the first rail at a predetermined position.

Abstract: The present disclosure relates to a semiconductor memory device and a fabricating method thereof, and the semiconductor memory device includes a substrate, bit lines, plugs and a spacer structure. The bit lines are separately disposed on the substrate, and the plugs are also disposed on the substrate to alternately arrange with the bit lines. The spacer structure is disposed on the substrate, between each of the bit lines and each of the plugs. The spacer structure includes a first air gap layer, a first spacer and a second air gap layer, and the first air gap layer, the first spacer and the second air gap layer are sequentially stacked between sidewalls of the bit lines and the plugs. Therefore, two air gap layers may be formed between the bit lines and the storage node contacts to improve the delay between the resistor and the capacitor.

Abstract: A method of manufacturing a semiconductor memory device is provided in the present invention, including steps of providing a substrate, forming word lines extending in a first direction in said substrate, forming bit lines extending in a second direction over said word lines, forming partition structures between said bit lines and right above said word lines, forming storage node contacts in spaces defined by said bit lines and said partition structures, wherein a portion of said storage node contact protruding from top surfaces of said bit lines and said partition structures is contact pad, forming a silicon nitride liner on said contact pads, said bit lines and said partition structures, and forming a silicon oxide layer on said silicon nitride liner.

Abstract: A semiconductor memory device is provided in the present invention, including a substrate, word lines in the substrate, bit lines over the word lines, partition structures between the bit lines and right above the word lines, storage node contacts in spaces defined by the bit lines and the partition structures and electrically connecting with the substrate, wherein a portion of the storage node contact protruding from top surfaces of the bit lines and the partition structures is contact pad, and contact pad isolation structures on the partition structures and between the contact pads, wherein the contact pad isolation structure includes outer silicon nitride layers and inner silicon oxide layers.

Abstract: The present disclosure relates to a semiconductor memory device and a fabricating method thereof, and the semiconductor memory device includes a substrate, bit lines, plugs and a spacer structure. The bit lines are separately disposed on the substrate, and the plugs are also disposed on the substrate to alternately arrange with the bit lines. The spacer structure is disposed on the substrate, between each of the bit lines and each of the plugs. The spacer structure includes a first air gap layer, a first spacer and a second air gap layer, and the first air gap layer, the first spacer and the second air gap layer are sequentially stacked between sidewalls of the bit lines and the plugs. Therefore, two air gap layers may be formed between the bit lines and the storage node contacts to improve the delay between the resistor and the capacitor.

Abstract: A semiconductor memory device is provided in the present invention, including a substrate, word lines in the substrate, bit lines over the word lines, partition structures between the bit lines and right above the word lines, storage node contacts in spaces defined by the bit lines and the partition structures and electrically connecting with the substrate, wherein a portion of the storage node contact protruding from top surfaces of the bit lines and the partition structures is contact pad, and contact pad isolation structures on the partition structures and between the contact pads, wherein the contact pad isolation structure includes outer silicon nitride layers and inner silicon oxide layers.

Abstract: A method and apparatus for hiding information in a communication protocol signal are disclosed. The apparatus comprises a bit selection unit, an information encoding unit and an information decoding unit, wherein the bit selection unit selects suitable bits in the signal for hiding information, the information encoding unit encodes the information into the suitable bits selected by the bit selection unit, and the information decoding unit decodes the information encoded in the suitable bits.

Abstract: A location awareness system for a wireless local area network (WLAN). The location awareness system of the present invention allows the infrastructure owner to control the content and method of location related information. The location information translation is performed by the local area server, thus private information is protected inside the WLAN, hidden from to the public presence server. The location awareness system comprises an area agent, a local area server, and a presence server. The area agent obtains location information by providing the area tag to the local area server, and only submits the authorized location information (location awareness information) to the presence server either directly or by the local area server. The present invention further comprises a relay as a cache between the area agent and the local area server.