Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.

Abstract: An adjustable leg includes a foot assembly, a leg assembly, a tube assembly and a rod assembly. The foot assembly is coupled to the leg assembly. The rod assembly is rotatably coupled to the tube assembly. The rod assembly is threaded through an aperture in the leg assembly and the tube assembly. The rotation of the rod assembly adjusts the overall length of the adjustable leg. Engagement of the leg assembly with the inside of the tube assembly prevents the rotation of the tube assembly when the rod assembly is rotated.

Abstract: The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.