Abstract: A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.

Abstract: A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

Abstract: A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

Abstract: Providing a technique for suppressing dust generation at the time of attraction and detachment of an object to be attracted, and for enabling control the attraction force of the attraction device to be uniform. The attraction device of the present invention includes a main body part having attraction electrodes within a dielectric; and an attraction part for attracting a substrate, provided on a surface of the main body part at an attraction-side. The attraction part includes a contact support part that is in contact with, and supports the substrate and a non-contact part that is not in contact with the substrate. In the attraction part, the volume resistivity of the material of the contact support part is greater than the volume resistivity of the material of the non-contact part.

Abstract: A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.

Abstract: A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.

Abstract: Providing a technique for suppressing dust generation at the time of attraction and detachment of an object to be attracted, and for enabling control the attraction force of the attraction device to be uniform. The attraction device of the present invention includes a main body part having attraction electrodes within a dielectric; and an attraction part for attracting a substrate, provided on a surface of the main body part at an attraction-side. The attraction part includes a contact support part that is in contact with, and supports the substrate and a non-contact part that is not in contact with the substrate. In the attraction part, the volume resistivity of the material of the contact support part is greater than the volume resistivity of the material of the non-contact part.

Abstract: The present invention provides a technology for reducing the attractive force of a chucking device at its surface contacting an object to be chucked to thereby eliminate or minimize the generation of dust when chucking and removing the object, and to enable control for making the attractive force of the chucking device uniform.

Abstract: A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device.

Abstract: A chuck equipment which can hold insulating substrates is provided. First and second electrodes are provided to be exposed on the base the surface of which is insulated. The insulating substrate is placed in contact with or in close proximity to the surfaces of the first and second electrodes. Since an electric field having a high rate of spatial change is established between the first and second electrodes, the substrate is held against the surface of the chuck equipment by the gradient force. Since the magnitude of the gradient force depends on that of the rate of change of the electric field, a voltage may be applied between the first and second electrodes to establish an electric field of 1.0×106V/m or greater.

Abstract: According to the present invention, there is provided an electrostatic chuck for electrostatically attracting an insulative substrate, an apparatus for heating/cooling an insulative substrate using the electrostatic chuck, and a method for controlling the temperature of an insulative substrate. The shape and the properties of the dielectric, and the shape of the electrodes, which form the electrostatic chuck, are disclosed. Also the apparatus for heating/cooling an insulative substrate comprising a plate, a gas supply conduit and a temperature controlling system, and the apparatus for processing an insulative substrate in which the apparatus for heating/cooling an insulative substrate is installed are disclosed.

Abstract: A chuck equipment which can hold insulating substrates is provided. First and second electrodes are provided to be exposed on the base the surface of which is insulated. The insulating substrate is placed in contact with or in close proximity to the surfaces of the first and second electrodes. Since an electric field having a high rate of spatial change is established between the first and second electrodes, the substrate is held against the surface of the chuck equipment by the gradient force. Since the magnitude of the gradient force depends on that of the rate of change of the electric field, a voltage may be applied between the first and second electrodes to establish an electric field of 1.0×106 V/m or greater.