Patents by Inventor Ken Nakahara

Ken Nakahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10375953
    Abstract: A synthetic polymer film (34A) having a surface which has a plurality of raised portions (34Ap), (34Bp), wherein a two-dimensional size of the plurality of raised portions (34Ap), (34Bp) is in a range of more than 20 nm and less than 500 nm when viewed in a normal direction of the synthetic polymer film (34A), (34B), the surface having a microbicidal effect. The synthetic polymer film (34A), (34B) includes a urethane resin and a silicone oil, and the silicone oil has a HLB value of not less than 14 and not more than 18.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: August 13, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Takahiro Nakahara, Miho Yamada, Kiyoshi Minoura, Ken Atsumo
  • Publication number: 20190207023
    Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene
    Type: Application
    Filed: March 7, 2019
    Publication date: July 4, 2019
    Inventors: Kenji YAMAMOTO, Tetsuya FUJIWARA, Minoru AKUTSU, Ken NAKAHARA, Norikazu ITO
  • Publication number: 20190174752
    Abstract: A synthetic polymer film (34A) having a surface which has a plurality of raised portions (34Ap), (34Bp), wherein a two-dimensional size of the plurality of raised portions (34Ap), (34Bp) is in a range of more than 20 nm and less than 500 nm when viewed in a normal direction of the synthetic polymer film (34A), (34B), the surface having a microbicidal effect, and a concentration of a nitrogen element included in the surface is not less than 0.7 at %.
    Type: Application
    Filed: February 13, 2019
    Publication date: June 13, 2019
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Miho YAMADA, Kiyoshi MINOURA, Takahiro NAKAHARA, Ken ATSUMO
  • Patent number: 10256335
    Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: April 9, 2019
    Assignee: ROHM CO., LTD.
    Inventors: Kenji Yamamoto, Tetsuya Fujiwara, Minoru Akutsu, Ken Nakahara, Norikazu Ito
  • Patent number: 9837521
    Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: December 5, 2017
    Assignee: ROHM CO., LTD.
    Inventors: Kenji Yamamoto, Tetsuya Fujiwara, Minoru Akutsu, Ken Nakahara, Norikazu Ito
  • Publication number: 20170338333
    Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene
    Type: Application
    Filed: August 8, 2017
    Publication date: November 23, 2017
    Inventors: Kenji YAMAMOTO, Tetsuya FUJIWARA, Minoru AKUTSU, Ken NAKAHARA, Norikazu ITO
  • Patent number: 9806824
    Abstract: There is provided a power supply receiver-transmitter device, a wireless power supply receiver, and a wireless power supply transmitter which allow wireless power supply transmission and wireless data transmission and reception, and improve the usability thereof. The wireless power supply receiver-transmitter device includes: a wireless power supply receiver (PR) including a power receiver unit (RU) and a first data transmitter/receiver unit (DRU); a wireless power supply transmitter (PT) including a power transmitter unit (TU); and a second data transmitter/receiver unit (DTU). The wireless power supply receiver (PR) wirelessly receives electric power transmitted from the wireless power supply transmitter (PT), and the first data transmitter/receiver unit (DRU) bidirectionally transmits and receives data to/from the second data transmitter/receiver units (DTU) through optical communications.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: October 31, 2017
    Assignee: ROHM CO., LTD.
    Inventors: Ken Nakahara, Masayuki Kitagawa
  • Publication number: 20150279982
    Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene
    Type: Application
    Filed: October 7, 2013
    Publication date: October 1, 2015
    Inventors: Kenji Yamamoto, Tetsuya Fujiwara, Minoru Akutsu, Ken Nakahara, Norikazu Ito
  • Patent number: 8975645
    Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
    Type: Grant
    Filed: November 13, 2013
    Date of Patent: March 10, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
  • Patent number: 8946727
    Abstract: There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate (1) made of MgxZn1-xO (0?x?0.5), the principal plane of which is a plane A (11-20) or a plane M (10-10), and single crystal layers (2) to (6) made of zinc oxide based compound semiconductor, which are epitaxially grown on the principal plane of the substrate (1) in such orientation that a plane parallel to the principal plane is a plane {11-20} or a plane {10-10} and a plane perpendicular to the principal plane is a plane {0001}.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: February 3, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Kentaro Tamura
  • Patent number: 8941105
    Abstract: There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0?x?0.5) is used as the substrate (1).
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: January 27, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Ken Nakahara
  • Publication number: 20140309537
    Abstract: A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Inventors: Daisuke Niwa, Koji Terumoto, Kazuhiro Oguchi, Masahide Tanaka, Ken Nakahara
  • Patent number: 8795184
    Abstract: A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: August 5, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Daisuke Niwa, Koji Terumoto, Kazuhiro Oguchi, Masahide Tanaka, Ken Nakahara
  • Publication number: 20140086592
    Abstract: There is provided a power supply receiver-transmitter device, a wireless power supply receiver, and a wireless power supply transmitter which allow wireless power supply transmission and wireless data transmission and reception, and improve the usability thereof. The wireless power supply receiver-transmitter device includes: a wireless power supply receiver (PR) including a power receiver unit (RU) and a first data transmitter/receiver unit (DRU); a wireless power supply transmitter (PT) including a power transmitter unit (TU); and a second data transmitter/receiver unit (DTU). The wireless power supply receiver (PR) wirelessly receives electric power transmitted from the wireless power supply transmitter (PT), and the first data transmitter/receiver unit (DRU) bidirectionally transmits and receives data to/from the second data transmitter/receiver units (DTU) through optical communications.
    Type: Application
    Filed: September 26, 2013
    Publication date: March 27, 2014
    Applicant: ROHM CO., LTD.
    Inventors: Ken NAKAHARA, Masayuki KITAGAWA
  • Publication number: 20140071525
    Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
    Type: Application
    Filed: November 13, 2013
    Publication date: March 13, 2014
    Applicant: ROHM CO., LTD.
    Inventors: Ken NAKAHARA, Shunsuke AKASAKA, Koki SAKAMOTO, Tetsuo FUJII, Shunsuke FURUSE, Soichiro ARIMURA
  • Patent number: 8610133
    Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: December 17, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
  • Patent number: 8410478
    Abstract: A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0?X<1, preferably 0?X?0.5. In the p-type MgZnO thin film (1), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0×1018 cm?3 or more. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0×1017 cm?3 or less. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0×1016 cm?3 or less.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: April 2, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Hiroyuki Yuji, Kentaro Tamura, Shunsuke Akasaka, Masashi Kawasaki, Akira Ohtomo, Atsushi Tsukazaki
  • Patent number: 8304795
    Abstract: A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: November 6, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Atsushi Yamaguchi, Ken Nakahara
  • Publication number: 20120213242
    Abstract: A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material.
    Type: Application
    Filed: February 16, 2012
    Publication date: August 23, 2012
    Applicant: ROHM CO., LTD.
    Inventors: Taketoshi Tanaka, Shinya Takado, Junichi Kashiwagi, Masashi Yamamoto, Ken Nakahara
  • Patent number: 8247793
    Abstract: Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: August 21, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Shunsuke Akasaka, Masashi Kawasaki, Akira Ohtomo, Atsushi Tsukazaki