Patents by Inventor Ken NAKAKURA

Ken NAKAKURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist pattern-forming method, substrate-processing method, and photoresist composition
    Patent number: 9817311
    Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: November 14, 2017
    Assignee: JSR Corporation
    Inventors: Yuichiro Katsura, Ryu Matsumoto, Motoyuki Shima, Yuji Yada, Ken Nakakura
  • RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION
    Publication number: 20160266489
    Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.
    Type: Application
    Filed: May 25, 2016
    Publication date: September 15, 2016
    Applicant: JSR CORPORATION
    Inventors: Yuichiro KATSURA, Ryu MATSUMOTO, Motoyuki SHIMA, Yuji YADA, Ken NAKAKURA
  • Resist pattern-forming method, substrate-processing method, and photoresist composition
    Patent number: 9417527
    Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: August 16, 2016
    Assignee: JSR Corporation
    Inventors: Yuichiro Katsura, Ryu Matsumoto, Motoyuki Shima, Yuji Yada, Ken Nakakura
  • RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION
    Publication number: 20150048051
    Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.
    Type: Application
    Filed: August 12, 2014
    Publication date: February 19, 2015
    Applicant: JSR CORPORATION
    Inventors: Yuichiro KATSURA, Ryu MATSUMOTO, Motoyuki SHIMA, Yuji Yada, Ken NAKAKURA