Abstract: Grasping forceps include a cylindrical sheath, a shaft furnished inside the sheath, an operation unit provided near a base end of the sheath and sliding the shaft by converting rotating operation force into an axial direction of the shaft through a pin, and a grasping unit provided near a front end of the sheath and enabling upper and lower jaw units to be open and closed. The grasping unit includes a link unit that couples the upper and lower jaw units, and the front end of the shaft through a pin and opens and closes the upper and lower jaw units according to a slide of the shaft, and the link unit, when the upper and lower jaw units are in a closed state, sets facing grasping surfaces to be parallel and have a predetermined gap dimension.

Abstract: A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a carrier gas, and TMG and NH3 as raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using H2 as a carrier gas, the MOCVD furnace being supplied with NH3, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using N2 as a carrier gas, and TMI, TMA, and NH3 as raw materials.

Abstract: An exercise support apparatus includes an information processing unit that supports a setting of a next exercise menu for improvement to a targeted body, based on prior body motion information on a subject detected by a motion sensor.

Abstract: An apparatus (1) includes an exercise sensor (31) that continuously detects a movement of an exerciser accompanied by intermittent exercise, and a heart rate meter (32) that continuously measures a heart rate of the exerciser, and further includes an activity detection unit (12), a heart rate monitoring unit (13), an activity monitoring unit (14), and a notification processing unit (15). The activity detection unit (12) detects, from the movement of the exerciser, an activity intensity, a high activity intensity period, and a low activity intensity period. The heart rate monitoring unit (13) detects a declining trend in the heart rate of the exerciser, in the low activity intensity period each time, and monitors whether or not the declining trend of this time is low as compared with a predetermined reference.

Abstract: To provide a collagen sponge excellent in mechanical strength and a production method for the collagen sponge. A collagen sponge including a porous construct having a pore structure, the collagen sponge having a tensile strength of 1 N or more and 5 N or less in every direction including a length direction and a width direction. The collagen sponge may be produced by a production method including the following steps: (1) a step of subjecting a collagen solution obtained by mixing collagen and a solvent to stirring and deaeration treatment; (2) a step of subjecting the collagen solution to freeze-dry treatment; and (3) a step of subjecting a dried collagen product after the freeze-dry treatment to insoluble treatment.

Abstract: A joint evaluation apparatus includes an inertial sensor unit that is attached in a vicinity of a joint with joint axes of the joint to connect bones on both sides parallel to a detection axis and detects motion of a bone of a joint axis of which a range of motion of joint movement is limited, among the joint axes, as a waveform signal, a load detection unit that detects a load applied to the joint, a data obtaining unit that, when detecting generation of the load, obtains the waveform signal to be detected by the inertial sensor unit, in a time direction and an intensity direction, and a feature amount calculation unit that analyzes the waveform signal and calculates a feature amount that evaluates movement quality of the joint.

Abstract: Disclosed are a ground reaction force index estimation system, a ground reaction force index estimation method, and a ground reaction force index estimation program that can compute ground reaction force indices at low computation costs. The ground reaction force index estimation system comprises footwear and an external device connected to the footwear. The footwear comprises a wearable sensor that measures triaxial acceleration and/or triaxial angular velocity and a computation unit that computes ground reaction force indices by multiple regression analysis from values computed from the measurement results to be used as explanatory variables. The external device comprises a controller that evaluates walking and running motions for the user on the basis of the measurement results by the wearable sensor received from the footwear, the computed ground reaction force indices, and the determination reference information and a presentation unit that presents the results of the evaluation of the running motion.

Abstract: To provide a collagen sponge excellent in mechanical strength and a production method for the collagen sponge. A collagen sponge including a porous construct having a pore structure, the collagen sponge having a tensile strength of 1 N or more and 5 N or less in every direction including a length direction and a width direction. The collagen sponge may be produced by a production method including the following steps: (1) a step of subjecting a collagen solution obtained by mixing collagen and a solvent to stirring and deaeration treatment; (2) a step of subjecting the collagen solution to freeze-dry treatment; and (3) a step of subjecting a dried collagen product after the freeze-dry treatment to insoluble treatment.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

Abstract: A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a carrier gas, and TMG and NH3 as raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using H2 as a carrier gas, the MOCVD furnace being supplied with NH3, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using N2 as a carrier gas, and TMI, TMA, and NH3 as raw materials.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

Abstract: A process of forming a field transistor (FET) and a FET are disclosed. The FET includes a nitride semiconductor stack on a substrate. A pair of n+-regions made of oxide semiconductor material are provided within respective recesses in the semiconductor stack. Protecting layers, each made of oxide material, cover peripheries of the n+-regions. Electrodes are provided in openings in the protecting layers to be in direct contact with the n+-regions.

Abstract: Provided is a collagen sponge which has compressive strength (stress) equivalent to that of a tissue into which the collagen sponge is to be implanted, has no unevenness in structure and stress, and has a pore structure for allowing cells to infiltrate thereinto. The collagen sponge is obtained by subjecting a collagen dispersion, a collagen solution, or a mixture thereof having a collagen concentration of 50 mg/ml or more to freeze-drying and insolubilization treatment thereafter. The collagen sponge thus obtained has a stress of from 10 kPa to 30 kPa when loaded with 10% strain, has in its surface and inside a pore structure having a mean pore diameter ranging from 50 ?m to 400 ?m, and has a pore diameter standard deviation equal to or less than 80% of the mean pore diameter.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

Abstract: A process of forming a field transistor (FET) and a FET are disclosed. The FET includes a nitride semiconductor stack on a substrate. A pair of n+-regions made of oxide semiconductor material are provided within respective recesses in the semiconductor stack. Protecting layers, each made of oxide material, cover peripheries of the n+-regions. Electrodes are provided in openings in the protecting layers to be in direct contact with the n+-regions.

Abstract: To provide a collagen sponge excellent in mechanical strength and a production method for the collagen sponge. A collagen sponge including a porous construct having a pore structure, the collagen sponge having a tensile strength of 1 N or more and 5 N or less in every direction including a length direction and a width direction. The collagen sponge may be produced by a production method including the following steps: (1) a step of subjecting a collagen solution obtained by mixing collagen and a solvent to stirring and deaeration treatment; (2) a step of subjecting the collagen solution to freeze-dry treatment; and (3) a step of subjecting a dried collagen product after the freeze-dry treatment to insoluble treatment.

Abstract: A process of forming a field effect transistor (FET) and a FET are disclosed. The process includes steps of forming a nitride semiconductor layer on a substrate; selectively growing an n+-region made of oxide semiconductor material on the nitride semiconductor layer and subsequently depositing oxide film on the n+-region; rinsing the oxide film with an acidic solution; forming an opening in the oxide film to expose the oxide semiconductor layer therein; and depositing a metal within the opening such that the metal is in direct contact with the n+-region.

Abstract: A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.