Abstract: This invention provides a method for making a semiconductor device. The method applies an uniform thickness of an Anti-Reflection Coat (ARC) to improve the dimensional controllability of a resist pattern by sufficiently exposing a resist layer using the ARC without reduction of the throughout. A layer to be etched is formed over a portion of a substrate surface including a step portion. A first resist layer sensitive to a first exposure light is formed on the layer to be etched. The first resist layer has a film thickness equal to or less than 1.5 .mu.m and reduces a height of the step. The ARC material has a low reflectance relative to a second exposure light and is formed on the first resist layer with a thickness equal to or less than 0.2 .mu.m. A second resist layer sensitive to a second exposure light is formed on the ARC material. The second resist layer is patterned by the second exposure light. The pattern in the second resist layer is also formed on the ARC material.

Abstract: A photomask includes square holes formed therein, each of the square holes having sides each of which is located to be parallel or perpendicular to a straight line radially extending between the center of the photomask corresponding to the center of a lens and the center of that hole. By forming the holes in such a manner, the sides of the holes are located in the tangential or sagittal plane such that the effect of aberration can be minimized.

Abstract: A photomask has a light shielding layer and a phase shifter based on a phase shift method, both of which are mounted on a mask substrate. The light shielding layer is shaped in a light shielding pattern, having light passing regions beside its opposite sides. The phase shifter is made by thinning the mask substrate at a portion associated with one of the light passing regions. An optical path through the phase shifter is shorter than the optical path of the other light passing region, thereby shifting the phase of light.