Patents by Inventor Ken Okano

Ken Okano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector designing method for photodetector having photoelectric conversion layer mostly composed of amorphous selenium and layer thickness designing method thereof, photodetector using the photoelectric conversion layer and photodetector manufacturing method thereof, and storage medium
    Patent number: 11817513
    Abstract: A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers NSL of the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers NSL.
    Type: Grant
    Filed: December 2, 2022
    Date of Patent: November 14, 2023
    Assignees: EIWA BUSSAN CO., LTD.
    Inventors: Ken Okano, Joshua Dumenkosi John
  • PHOTODETECTOR DESIGNING METHOD FOR PHOTODETECTOR HAVING PHOTOELECTRIC CONVERSION LAYER MOSTLY COMPOSED OF AMORPHOUS SELENIUM AND LAYER THICKNESS DESIGNING METHOD THEREOF, PHOTODETECTOR USING THE PHOTOELECTRIC CONVERSION LAYER AND PHOTODETECTOR MANUFACTURING METHOD THEREOF, AND STORAGE MEDIUM
    Publication number: 20230095246
    Abstract: A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers NSL of the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers NSL.
    Type: Application
    Filed: December 2, 2022
    Publication date: March 30, 2023
    Inventors: Ken OKANO, Joshua Dumenkosi JOHN
  • Diamond n-type semiconductor diamond p-n junction diode
    Patent number: 5223721
    Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
    Type: Grant
    Filed: February 7, 1992
    Date of Patent: June 29, 1993
    Assignee: The Tokai University Juridical Foundation
    Inventors: Masamori Iida, Tateki Kurosu, Ken Okano
  • Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method
    Patent number: 5112775
    Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
    Type: Grant
    Filed: November 7, 1990
    Date of Patent: May 12, 1992
    Assignee: The Tokai University Juridical Foundation
    Inventors: Masamori Iida, Tateki Kurosu, Ken Okano