Abstract: A film forming method includes performing a process including a) and b) a plurality of times, with a) being performed before b) in the process: a) supplying borazine-based gas to a substrate, thereby adsorbing the borazine-based gas to the substrate and b) exposing the substrate to a nitrogen plasma.

Abstract: A film-forming method includes (a) providing a substrate including a recess; (b) supplying aminosilane to the substrate, and forming an inhibition layer over a surface of the recess; (c) forming a silicon nitride film over the surface of the recess by performing a cycle a first number of times, the cycle including supplying a silicon raw material to the substrate, and supplying a nitriding agent to the substrate at a timing different from the supply of the silicon raw material to the substrate; and (d) repeatedly performing (b) and (c) in order of (b) and (c).

Abstract: A film-forming method includes (a) providing a substrate including a recess; (b) supplying aminosilane to the substrate, and forming an inhibition layer over a surface of the recess; (c) forming a silicon nitride film over the surface of the recess by performing a cycle a first number of times, the cycle including supplying a silicon raw material to the substrate, and supplying a nitriding agent to the substrate at a timing different from the supply of the silicon raw material to the substrate; and (d) adjusting adsorptivity of the aminosilane onto the surface of the recess before (b).

Abstract: A film-forming method according to an aspect of the present disclosure forms a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate. The film-forming method includes: supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.

Abstract: With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate.

Abstract: A film forming method includes performing a process including a) and b) a plurality of times, with a) being performed before b) in the process: a) supplying borazine-based gas to a substrate, thereby adsorbing the borazine-based gas to the substrate and b) exposing the substrate to a nitrogen plasma.

Abstract: An information processing apparatus includes a data acquisition unit, a simulation execution unit, and an optimization unit. The data acquisition unit acquires execution result data including an execution result of the substrate processing based on a process parameter including a pressure in the substrate processing apparatus and including sensor data of the pressure in the substrate processing apparatus. The simulation execution unit inputs the execution result data into a simulation model pre-stored in a storage to calculate a pressure in the substrate processing apparatus that is predicted to approach a target value for a substrate processing result. The optimization unit calculates a predicted value of the substrate processing result based on the process parameter including the calculated pressure.

Abstract: With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate.