Abstract: Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

Abstract: In some embodiments a semiconductor die package includes a package substrate, a plurality of dies each attached to the package substrate, a layer of a thermally conducting sintered paste over the top of each die, a layer of flexible polymer thermal interface material over the sintered paste, and a heat spreader over and thermally connected to the polymer thermal interface material.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.

Abstract: In some embodiments a semiconductor die package includes a package substrate, a plurality of dies each attached to the package substrate, a layer of a thermally conducting sintered paste over the top of each die, a layer of flexible polymer thermal interface material over the sintered paste, and a heat spreader over and thermally connected to the polymer thermal interface material.

Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.

Abstract: A fluid applicator configured to apply a fluid to at least one substrate feature includes a manifold plate having an inflow orifice and a manifold reservoir. A distributor plate is coupled with the manifold plate. The distributor plate includes a distributor surface extending across the manifold reservoir, and a distributor port array spread across the distributor surface and in communication with the manifold reservoir. A compressible reticulated media is configured for applying the fluid to the at least one substrate feature. The compressible reticulated media includes an input interface coupled along the distributor surface, and a substrate interface having an applicator profile corresponding to a feature profile of the at least one substrate feature. Reticulations extend from the input interface to the substrate interface, and the reticulations are distributed across the substrate interface.

Abstract: A fluid applicator configured to apply a fluid to at least one substrate feature. The includes compressible reticulated media including an input interface configured for coupling with a fluid reservoir, and a substrate interface having an applicator profile corresponding to a feature profile of the at least one substrate feature. Reticulations extend from the input interface to the substrate interface, and the reticulations are distributed across the applicator profile. The compressible reticulated media includes filling and dispensing configurations. In the dispensing configuration the substrate interface is configured for engagement with the at least one substrate feature, the compressible reticulated media is compressed, and according to the compression the fluid is applied across the feature profile. In the filling configuration the compressible reticulated media is configured for expansion relative to the dispensing configuration, and the fluid infiltrates the reticulations according to the expansion.

Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.

Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.