Abstract: A method of applying heat shield material to form a heat shield layer on a crown surface of a piston of an engine is provided. The method includes the steps of disposing a dispenser that linearly discharges the heat shield material toward the crown surface, and moving an applied position of the heat shield material with respect to the crown surface in a circumferential direction of the crown surface, while discharging the heat shield material from the dispenser toward the crown surface.

Abstract: The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Abstract: A coating composition for forming a coating film including particles and a resin binder is so configured that a content of the particles in the coating film is more than 30 vol%, the coating composition includes the particles, a raw resin of the resin binder, and a solvent, and a ratio V/D is 2.5 or less, where V is a volatilization rate (g/m2·s) of the solvent, and D is a diffusion coefficient (10?9 m2/s) of the solvent in the coating composition.

Abstract: A method of applying to a crown surface of a piston, a heat shield material for forming a heat shield layer, is provided. The method includes masking the piston with a masking member, the masking member including a first part that covers at least part of a side surface of the piston with a first clearance between the side surface and the first part, and a second part that covers an outer circumferential part of the crown surface with a second clearance between the outer circumferential part and the second part, and applying the heat shield material, while the piston is masked.

Abstract: A method of applying heat shield material to form a heat shield layer on a crown surface of a piston of an engine is provided. The method includes the steps of disposing a dispenser that linearly discharges the heat shield material toward the crown surface, and moving an applied position of the heat shield material with respect to the crown surface in a circumferential direction of the crown surface, while discharging the heat shield material from the dispenser toward the crown surface.

Abstract: A semiconductor device includes: a semiconductor element, a first lead frame, a second lead frame, and a thermally conductive member; and a sealing member sealing them. The first lead frame includes: a first portion exposed from a first side surface of the sealing member; and a second portion located closer to a lower surface of the sealing member than the first portion in a second direction crossing the lower surface. The semiconductor device further includes an intermediate frame which is located between the second portion and the fifth portion at least in the second direction. A distance, in the first direction, between the second portion and the intermediate frame is shorter than a distance, in the second direction, between an upper surface of the first portion and the upper surface of the second portion.

Abstract: A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

Abstract: A power module includes an insulating substrate, a case member, a power semiconductor element, a base member, a sealing member, and an adhesive member. The insulating substrate has a first surface and a second surface opposite to the first surface. The case member surrounds the insulating substrate when viewed in a direction perpendicular to the first surface. The power semiconductor element faces the first surface. The base member faces the second surface. The sealing member seals the power semiconductor element and the insulating substrate and is in contact with the case member. The adhesive member fixes the base member and the case member, and surrounds the insulating substrate when viewed in the direction perpendicular to the first surface.

Abstract: A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

Abstract: A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

Abstract: The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Abstract: A lead frame (4) includes an inner lead (5), an outer lead (2) connected to the inner lead (5), and a power die pad (7). A power semiconductor device (9) is bonded onto the power die pad (7). A first metal thin line (11) electrically connects the inner lead (5) and the power semiconductor device (9). Sealing resin (1) seals the inner lead (5), the power die pad (7), the power semiconductor device (9), and the first metal thin line (11). The sealing resin (1) includes an insulating section (15) directly beneath the power die pad (7). A thickness of the insulating section (15) is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (1). A first hollow (14) is provided on an upper surface of the sealing resin (1) directly above the power die pad (7) in a region without the first metal thin line (11) and the power semiconductor device (9).

Abstract: A heat sink (4) having a step in a bottom surface corner and a rectangular planar shape is disposed in an interior of a cavity (5) of a metal mold (1) and a first pin (2) is caused to project from a bottom surface of the cavity (5) to position the heat sink (4). A second pin (3) projecting from the bottom surface of the cavity (5) is disposed at the step of the positioned heat sink (4). After the heat sink (4) is positioned, the first pin (2) is lowered to the bottom surface of the cavity (5) and the heat sink (4) is sealed with the mold resin (10) with the second pin (3) being left projecting.

Abstract: It is an object of the present invention to provide a method for manufacturing a resin-sealed power semiconductor device that facilitates the separation of a suspension lead from a mold resin and a lead frame. A method for manufacturing a resin-sealed power semiconductor device according to the present invention includes the following steps: (a) sealing a semiconductor element and a lead frame, to prepare a sealed body in which a terminal lead and a suspension lead that are included in the lead frame project outward from a side of the mold resin; (b) punching a portion of the suspension lead, the portion projecting from the mold resin, with a first punch in a first direction, to separate the suspension lead from the mold resin; and (c) punching the projecting portion of the suspension lead with a second punch in a second direction.

Abstract: A heat sink (4) having a step in a bottom surface corner and a rectangular planar shape is disposed in an interior of a cavity (5) of a metal mold (1) and a first pin (2) is caused to project from a bottom surface of the cavity (5) to position the heat sink (4). A second pin (3) projecting from the bottom surface of the cavity (5) is disposed at the step of the positioned heat sink (4). After the heat sink (4) is positioned, the first pin (2) is lowered to the bottom surface of the cavity (5) and the heat sink (4) is sealed with the mold resin (10) with the second pin (3) being left projecting.

Abstract: A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

Abstract: A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

Abstract: A semiconductor device includes a lead frame, a semiconductor chip fixed to an upper surface of the lead frame, a first resin in contact with a lower surface of the lead frame, and a second resin provided on the first resin, wherein the first resin is higher in heat conductivity than the second resin, and the first resin and the second resin cover the semiconductor chip.

Abstract: An object is to provide a technology that reduces the number of components and that is capable of suppressing the cost. A structure including semiconductor elements, a plurality of electrode terminals, and a dam bar for connecting the plurality of electrode terminals is prepared, and a part of the structure including a part of the plurality of electrode terminals and the dam bar is arranged in the terminal hole. Further, the part of the structure is clamped by a movable clamp inside the terminal hole, and at least a portion of the movable clamp is fitted into the terminal hole, and then a resin is injected into an internal space of a pair of molds.

Abstract: A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.