Abstract: A sub-fab area installation apparatus capable of reducing a power consumption used in manufacturing of semiconductors is disclosed. The sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; an abatement device configured to detoxify the processing gas discharged from the vacuum pump; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a first downstream line, a second downstream line, and a third downstream line configured to supply the cooling liquid that has passed through the abatement device, the vacuum pump, and the cooling unit to the heating unit.

Abstract: A sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a distribution line configured to supply the cooling liquid to the vacuum pump and the cooling unit; and a merging return line configured to merge the cooling liquid that has passed through the vacuum pump and the cooling unit and return the cooling liquid to the cooling source.

Abstract: A probe device includes an electrode plate arranged above a mounting table for mounting thereon a semiconductor wafer and electrically connected to a tester, a contact probe arranged at a side of the mounting table and electrically connected to a mounting table electrode of the mounting table. The contact probe includes a contact portion, having a top surface formed uneven, to be in contact with the electrode plate, and a cable connection portion formed as one unit with the contact portion. The contact portion and the cable connection portion are vertically movable by a biasing member provided below the cable connection portion. When the probes are made contact with electrodes of a semiconductor device of the semiconductor wafer by moving up the mounting table, the contact portion and the electrode plate are made contact with each other and the backside electrode and the tester are electrically connected to each other.

Abstract: A probe apparatus includes a movable mounting table for holding a test object provided with a plurality of power devices including diodes; a probe card arranged above the mounting table with probes; a measuring unit for measuring electrical characteristics of the power devices by bringing the probes into electrical contact with the test object in a state that a conductive film electrode formed on at least a mounting surface of the mounting table is electrically connected to a conductive layer formed on a rear surface of the test object; and a conduction member for electrically interconnecting the conductive film electrode and the measuring unit when measuring the electrical characteristics. The conduction member is interposed between an outer peripheral portion of the probe card and an outer peripheral portion of the mounting table.

Abstract: A probe apparatus 10 has a movable mounting table 12 that mounts a wafer W on which multiple power devices are formed; a probe card 14 that is provided above the mounting table 12 and has multiple probes 14A; a conductive film electrode 13 formed on a mounting surface of the mounting table 12 and an outer peripheral surface thereof; and a measurement line 16 that electrically connects the conductive film electrode 13 to a tester 17. Further, the probe apparatus measures electrical characteristics of the power devices on the mounting table 12 at a wafer level. Furthermore, the measurement line 16 includes a switch device 18 configured to open and close an electric path of the measurement line 16 between the conductive film electrode 13 and the tester 17.

Abstract: A probe card 10 includes a first probe 11 configured to come into electric contact with an emitter electrode of a power device D; a block-shaped first connecting terminal 12 to which the first probe 11 is connected; a second probe 13 configured to come into electric contact with a gate electrode of the power device D; a block-shaped second connecting terminal 14 to which the second probe 13 is connected; a contact plate 15 configured to come into electric contact with a collector electrode of the power device D; and a block-shaped third connecting terminal 16 fixed to the contact plate 15. Further, the first connecting terminal 12, the second connecting terminal 14 and the third connecting terminal 16 electrically come into direct contact with corresponding connection terminals of a tester, respectively.

Abstract: A probe device includes an electrode plate arranged above a mounting table for mounting thereon a semiconductor wafer and electrically connected to a tester, a contact probe arranged at a side of the mounting table and electrically connected to a mounting table electrode of the mounting table. The contact probe includes a contact portion, having a top surface formed uneven, to be in contact with the electrode plate, and a cable connection portion formed as one unit with the contact portion. The contact portion and the cable connection portion are vertically movable by a biasing member provided below the cable connection portion. When the probes are made contact with electrodes of a semiconductor device of the semiconductor wafer by moving up the mounting table, the contact portion and the electrode plate are made contact with each other and the backside electrode and the tester are electrically connected to each other.

Abstract: A probe apparatus 10 has a movable mounting table 12 that mounts a wafer W on which multiple power devices are formed; a probe card 14 that is provided above the mounting table 12 and has multiple probes 14A; a conductive film electrode 13 formed on a mounting surface of the mounting table 12 and an outer peripheral surface thereof; and a measurement line 16 that electrically connects the conductive film electrode 13 to a tester 17. Further, the probe apparatus measures electrical characteristics of the power devices on the mounting table 12 at a wafer level. Furthermore, the measurement line 16 includes a switch device 18 configured to open and close an electric path of the measurement line 16 between the conductive film electrode 13 and the tester 17.

Abstract: A probe card 10 includes a first probe 11 configured to come into electric contact with an emitter electrode of a power device D; a block-shaped first connecting terminal 12 to which the first probe 11 is connected; a second probe 13 configured to come into electric contact with a gate electrode of the power device D; a block-shaped second connecting terminal 14 to which the second probe 13 is connected; a contact plate 15 configured to come into electric contact with a collector electrode of the power device D; and a block-shaped third connecting terminal 16 fixed to the contact plate 15. Further, the first connecting terminal 12, the second connecting terminal 14 and the third connecting terminal 16 electrically come into direct contact with corresponding connection terminals of a tester, respectively.

Abstract: A probe apparatus includes a movable mounting table for holding a test object provided with a plurality of power devices including diodes; a probe card arranged above the mounting table with probes; a measuring unit for measuring electrical characteristics of the power devices by bringing the probes into electrical contact with the test object in a state that a conductive film electrode formed on at least a mounting surface of the mounting table is electrically connected to a conductive layer formed on a rear surface of the test object; and a conduction member for electrically interconnecting the conductive film electrode and the measuring unit when measuring the electrical characteristics. The conduction member is interposed between an outer peripheral portion of the probe card and an outer peripheral portion of the mounting table.