Patents by Inventor Ken Tomino
Ken Tomino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9018622Abstract: A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.Type: GrantFiled: April 11, 2012Date of Patent: April 28, 2015Assignee: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shin-ya Fujimoto, Hiroki Maeda
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Patent number: 8999749Abstract: A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.Type: GrantFiled: April 11, 2012Date of Patent: April 7, 2015Assignee: Dai Nippon Printing Co., Ltd.Inventors: Shin-ya Fujimoto, Ken Tomino
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Publication number: 20140042421Abstract: A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.Type: ApplicationFiled: April 11, 2012Publication date: February 13, 2014Applicant: DAI NIPPON PRINTING CO., LTD.Inventors: Ken Tomino, Shin-ya Fujimoto, Hiroki Maeda
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Publication number: 20140027752Abstract: A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.Type: ApplicationFiled: April 11, 2012Publication date: January 30, 2014Applicant: DAI NIPPON PRINTING CO., LTD.Inventors: Shin-ya Fujimoto, Ken Tomino
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Patent number: 8202759Abstract: The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.Type: GrantFiled: January 21, 2009Date of Patent: June 19, 2012Assignee: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Masanao Matsuoka, Tomomi Suzuki, Hiroki Maeda
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Patent number: 7935828Abstract: The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating.Type: GrantFiled: June 2, 2006Date of Patent: May 3, 2011Assignee: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shigeru Sugawara, Hiroki Maeda, Masanao Matsuoka
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Publication number: 20110053313Abstract: The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.Type: ApplicationFiled: January 21, 2009Publication date: March 3, 2011Inventors: Ken Tomino, Masanao Matsuoka, Tomomi Suzuki, Hiroki Maeda
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Publication number: 20100224869Abstract: The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.Type: ApplicationFiled: May 18, 2010Publication date: September 9, 2010Applicant: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shigeru Sugawara, Hiroki Maeda, Masanao Matsuoka
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Patent number: 7470561Abstract: The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.Type: GrantFiled: March 29, 2005Date of Patent: December 30, 2008Assignee: Dai Nippon Printing Co., Ltd.Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Junichi Hanna
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Patent number: 7408188Abstract: An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.Type: GrantFiled: June 7, 2006Date of Patent: August 5, 2008Assignee: Dai Nippon Printing Co., Ltd.Inventors: Shigeru Sugawara, Hiroki Maeda, Ken Tomino, Masanao Matsuoka
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Patent number: 7405003Abstract: An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.Type: GrantFiled: March 29, 2005Date of Patent: July 29, 2008Assignee: Dai Nippon Printing Co., Ltd.Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Masahiro Funahashi, Junichi Hanna
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Patent number: 7365359Abstract: An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 ? electron aromatic rings, M 10 ? electron aromatic rings, and N 14? electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle ? of impedance of the organic semiconductor material is ?80°????90° as determined in the measurement of impedance in a frequency f range of 100 Hz?f?1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 ?m.Type: GrantFiled: October 30, 2003Date of Patent: April 29, 2008Assignee: Dai Nippon Printing Co., Ltd.Inventors: Shinobu Sakurada, Ken Tomino, Hiroki Maeda, Masanori Akada, Jun-ichi Hanna
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Publication number: 20070128763Abstract: This invention is directed to the provision of a method for organic semiconductor layer formation that can easily form a uniform thin film, by coating, which has good charge mobility and a high level of alignment. The method for organic semiconductor layer formation is characterized by comprising the steps of: forming a coating film in a mixed liquid crystal state using a mixture, which can exhibit a thermotropic mixed liquid crystal phase, prepared by mixing an organic semiconductor material with a solvent; and either cooling the coating film to a temperature at which the coating film does not exhibit any mixed liquid crystal state, or removing the solvent while cooling the coating film, to form an organic semiconductor layer comprising a smectic liquid crystal phase or a crystal phase of the organic semiconductor material.Type: ApplicationFiled: June 2, 2006Publication date: June 7, 2007Applicant: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shigeru Sugawara, Hiroki Maeda, Masanao Matsuoka
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Publication number: 20070128764Abstract: The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating.Type: ApplicationFiled: June 2, 2006Publication date: June 7, 2007Applicant: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shigeru Sugawara, Hiroki Maeda, Masanao Matsuoka
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Publication number: 20070045613Abstract: The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.Type: ApplicationFiled: June 2, 2006Publication date: March 1, 2007Applicant: Dai Nippon Printing Co., Ltd.Inventors: Ken Tomino, Shigeru Sugawara, Hiroki Maeda, Masanao Matsuoka
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Publication number: 20070045614Abstract: An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.Type: ApplicationFiled: June 7, 2006Publication date: March 1, 2007Applicant: Dai Nippon Printing Co., Ltd.Inventors: Shigeru Sugawara, Hiroki Maeda, Ken Tomino, Masanao Matsuoka
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Publication number: 20060076554Abstract: The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.Type: ApplicationFiled: March 29, 2005Publication date: April 13, 2006Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Masahiro Funahashi, Junichi Hanna
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Publication number: 20060054884Abstract: The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.Type: ApplicationFiled: March 29, 2005Publication date: March 16, 2006Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Junichi Hanna
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Publication number: 20040201011Abstract: Disclosed are an organic semiconductor material having high charge mobility characteristics and an organic semiconductor element. The organic semiconductor material has rodlike low-molecular liquid crystallinity, comprising: a skeleton structure comprising L 6 &pgr; electron aromatic rings, M 10 &pgr; electron aromatic rings, and N 14 &pgr; electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle &thgr; of impedance of the organic semiconductor material is −80°≦&thgr;≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 &mgr;m.Type: ApplicationFiled: October 30, 2003Publication date: October 14, 2004Inventors: Shinobu Sakurada, Ken Tomino, Hiroki Maeda, Masanori Akada, Jun-Ichi Hanna