Abstract: An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.

Abstract: A development aid device for development of a ladder program for a programmable controller has a program memory for storing the ladder program and an outline data generating part for sequentially scanning constituent elements of this stored ladder program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the ladder program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the ladder program, and a cross-reference data memory stores the generated cross-reference data.

Abstract: A development aid device for development of a ladder program such as a user program for a programmable controller has a program memory for storing the user program and an outline data generating part for sequentially scanning constituent elements of this stored user program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the user program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the user program, and a cross-reference data memory stores the generated cross-reference data.

Abstract: The present invention aims to provide a debug device for efficiently and smoothly performing the debugging process of the control program including function blocks. In the debug device for executing each step configuring the control program including the function blocks one step at a time, a step-over function for continuously executing the program in the function block, and moving the executing position to the step after the execution of the function program in the control program when the next executing position is the function block (FIG. A); a step-in function for having the head position of the program in the function block as the next executing position when the next executing position is the function block; and a step-out function for continuously executing from the next executing position to the end of the function block and moving the executing position to the step after the execution of the function block when the next executing position is the step of the program in the function block are provided.

Abstract: A development aid device for development of a ladder program such as a user program for a programmable controller has a program memory for storing the user program and an outline data generating part for sequentially scanning constituent elements of this stored user program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the user program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the user program, and a cross-reference data memory stores the generated cross-reference data.

Abstract: A micro system capable of setting an appropriate amount of stimulation being applied in order to control liquid flow in a channel. The micro system comprises micro-heaters (5b, 5c) for applying stimulation to liquid flowing through liquid channels (2b, 2c) formed in a plate (1) and controlling liquid flow by the stimulation from the micro-heaters (5b, 5c), and a means for electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c). An appropriate amount of stimulation can be set by electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c) through the control means.

Abstract: A development aid device for development of a ladder program for a programmable controller has a program memory for storing the ladder program and an outline data generating part for sequentially scanning constituent elements of this stored ladder program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the ladder program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the ladder program, and a cross-reference data memory stores the generated cross-reference data.

Abstract: The prevention of the deterioration of the minority carrier lifetime of a semiconductor substrate can be achieved by patterning the material of an impurity diffusion protecting layer on the surface of a semiconductor substrate by a making except a thermal oxidation process of the semiconductor substrate, for example by printing and firing paste material or by depositing paste material using a mask by CVD and forming a diffusion layer in the shape of an inverted pattern of the impurity diffusion protecting layer. Also, a low-priced photovoltaic device the photo-electric conversion efficiency of which is high can be manufactured by patterning and forming them.

Abstract: To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is performed on them and then the semiconductor substrate and the diffusion protecting plate are arranged such that those sides on which the impurity diffusion has been performed face each other and a second impurity diffusion is performed. The diffusion protecting plate may be replaced by a semiconductor substrate. The first and second impurity diffusions may be performed using an impurity of the same conductivity type.

Abstract: A photovoltaic cell produced by adhering a material for masking layer to a surface of a semiconductor substrate in pattern state to form the masking layer, and forming a dopant layer on the portion having no masking layer by gas phase diffusion or solid phase diffusion is high in photoelectric conversion efficiency and is effective for preventing lowering of minority carrier lifetime of the semiconductor substrate.

Abstract: A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements.

Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like.

Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors each being in contact with one of the concentrators, which is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not perpendicularly but obliquely from the right, upper side, for example, in the case where the module is established in contact with a curved plane of a roof or the like.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.

Abstract: In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.

Abstract: Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern.

Abstract: A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

Abstract: In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.